ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Real time observations of SiC (000–1) C-face and (0001) Si-face oxidation wereperformed using an in-situ ellipsometer over the oxygen-partial-pressure range from 0.1 to 1.0 atm.We analyzed the relations between oxide growth rate and oxide thickness by applying an empiricalrelation proposed by Massoud et al. We found the occurrence of oxidation enhancement in the thinoxide regime also for Si-face as well as for C-face. We have discussed the oxygen-partial-pressuredependence of the oxidation rate constants between SiC C- and Si face, comparing with that of Si
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.667.pdf
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