ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The performance of SiC MOSFET devices to date is below theoretically expectedperformance levels. This is widely considered to be attributed to defect at the SiO2/SiC interface thatdegrade the electrical performance of the device. To analyze the relationship between defectstructures near the interface and electrical performances, advanced computer simulations wereperformed. A slab model using 444 atoms for an amorphous oxide layer on a 4H-SiC (0001) substratewas made by using first-principles molecular dynamic simulation code optimized for theEarth-Simulator. Simulated heating and rapid quenching was performed for the slab model in order toobtain a more realistic structure and electronic geometry of a-SiO2/4H-SiC interface. The heatingtemperature, the heating time and the speed of rapid quenching were 4000 K, 3.0 ps and -1000 K/ps,respectively. The interatomic distance and the bond angles of SiO2 layers after the calculation areagree well with the most probable values of bulk a-SiO2 layers, and no coordination defects wereobserved in the neighborhood of SiC substrate
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.521.pdf
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