ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Differential isothermal capacitance transient spectroscopy (DICTS) and normalized isothermal capacitance transient spectroscopy (NICTS) were proposed to improve the resolution of the conventional isothermal capacitance transient spectroscopy (ICTS) which could characterize the deep levels in semiconductors isothermally. The resolution of the methods was studied for the closely spaced energy levels by the numerical simulation. Though the resolvable emission rate ratio R (R=λ2/λ1, where λ1 and λ2 are each thermal emission rate for two levels) of ICTS was around 5, R of DICTS was around 4. Moreover, R of NICTS reached 3.5 which is less than that of any other conventional methods. The error ratio of the estimation is almost the same as ICTS. The new method was applied to study the deep levels in a Si:Au system as an example and found two closely spaced energy levels explicitly. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1148105
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