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  • 1
    Electronic Resource
    Electronic Resource
    Selected ion monitoring for multicomponent analyses by computer control of accelerating voltage and magnetic field (1975)
    s.l. : American Chemical Society
    Analytical chemistry 47 (1975), S. 2373-2376 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60364a032
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Automated simultaneous qualitative and quantitative analysis of complex organic mixtures with a gas chromatography-mass spectrometry-computer system (1978)
    s.l. : American Chemical Society
    Analytical chemistry 50 (1978), S. 433-441 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50025a020
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Emitter current programmer for field desorption mass spectrometry (1976)
    s.l. : American Chemical Society
    Analytical chemistry 48 (1976), S. 427-429 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac60366a014
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Non-Mendelian and skewed segregation of DNA markers in wide crosses of the bean rust fungus, Uromyces appendiculatus (1996)
    Springer
    Current genetics 29 (1996), S. 159-167 
    Details
    ISSN: 1432-0983
    Keywords: Key words Genetic linkage mapping ; Segregation distortion ; RAPD ; RFLP
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  The inheritance of DNA markers was investigated in 27 F2 progeny from a single F1 hybrid derived from a wide cross in Uromyces appendiculatus. This cross was unusual because asexual spores were used to fertilize sexual fruiting structures. Sixty percent of the DNA markers failed to segregate according to simple Mendelian ratios. Segregation bias was evident, in that F2 progeny inherited on average 91% of maternal bands and 52% of paternal bands, which deviates significantly from the expected value for each of 75% for dominant markers. Because of these distortions, linkage mapping was not possible with this population. Evaluation of two F1s from a second wide cross, reciprocals obtained by normal fertilization, also showed non-Mendelian inheritance of one of three co-dominant RFLPs and five of six isozyme markers, indicating that the method of crossing was probably not responsible for the abnormal segregation patterns in the first cross. Either genetic incompatibility, similar to that of an interspecific cross, or selection of particular genotypes could explain the genetic anomalies reported here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002940050031
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Non-Mendelian and skewed segregation of DNA markers in wide crosses of the bean rust fungus,Uromyces appendiculatus (1996)
    Springer
    Current genetics 29 (1996), S. 159-167 
    Details
    ISSN: 1432-0983
    Keywords: Genetic linkage mapping ; Segregation distortion ; RAPD ; RFLP
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract The inheritance of DNA markers was investigated in 27 F2 progeny from a single F1 hybrid derived from a wide cross inUromyces appendiculatus. This cross was unusual because asexual spores were used to fertilize sexual fruiting structures. Sixty percent of the DNA markers failed to segregate according to simple Mendelian ratios. Segregation bias was evident, in that F2 progeny inherited on average 91 % of maternal bands and 52% of paternal bands, which deviates significantly from the expected value for each of 75% for dominant markers. Because of these distortions, linkage mapping was not possible with this population. Evaluation of two F1s from a second wide cross, reciprocals obtained by normal fertilization, also showed non-Mendelian inheritance of one of three co-dominant RFLPs and five of six isozyme markers, indicating that the method of crossing was probably not responsible for the abnormal segregation patterns in the first cross. Either genetic incompatibility, similar to that of an interspecific cross, or selection of particular genotypes could explain the genetic anomalies reported here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02221580
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    QTL MAPPING AND QUANTITATIVE DISEASE RESISTANCE IN PLANTS (1996)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Phytopathology 34 (1996), S. 479-501 
    Details
    ISSN: 0066-4286
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Biology
    Notes: Abstract Quantitative trait locus (QTL) mapping is a highly effective approach for studying genetically complex forms of plant disease resistance. With QTL mapping, the roles of specific resistance loci can be described, race-specificity of partial resistance genes can be assessed, and interactions between resistance genes, plant development, and the environment can be analyzed. Outstanding examples include: quantitative resistance to the rice blast fungus, late blight of potato, gray leaf spot of maize, bacterial wilt of tomato, and the soybean cyst nematode. These studies provide insights into the number of quantitative resistance loci involved in complex disease resistance, epistatic and environmental interactions, race-specificity of partial resistance loci, interactions between pathogen biology, plant development and biochemistry, and the relationship between qualitative and quantitative loci. QTL mapping also provides a framework for marker-assisted selection of complex disease resistance characters and the positional cloning of partial resistance genes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.phyto.34.1.479
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  • 7
    Electronic Resource
    Electronic Resource
    Low-temperature annealing of shallow arsenic-implanted layers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2189-2194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon layers implanted with 10 keV arsenic have been characterized using the differential Hall effect, secondary-ion-mass spectrometry, and Rutherford backscattering. Arsenic has been implanted to doses up to 2×1015 cm−2 and the layers have been annealed for 15 min at temperatures in the range 600–900 °C. The maximum free-carrier concentration and sheet resistance obtainable are 2.8×1014 cm−2 and 320 Ω/(D'Alembertian), respectively, for a dose of 1×1015 cm−2 annealed at 700 °C. There is evidence for both the loss of arsenic into a thin surface layer and the incomplete electrical activation of the arsenic remaining in the bulk. It is proposed that incomplete electrical activation is due to clustering in the amorphous phase during the solid-phase-epitaxial regrowth of the layer rather than clustering in the crystalline phase after the regrowth has occurred.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337979
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  • 8
    Electronic Resource
    Electronic Resource
    Defects and leakage currents in BF2-implanted preamorphized silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3567-3575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-dose silicon implants have been used to preamorphize the surface of single-crystal silicon prior to the implantation of low-energy BF2. The preamorphization results in shallow junction formation with minimal channeling of the boron, but high concentrations of electrically active defects are formed, leading to excessive reverse bias leakage currents. Measurements of leakage current and deep-level defects indicated that two distinct types of electrically active defects were important: those associated with what are probably complexes or clusters of point defects located near the far end of the range of the implanted silicon, and those associated with extended defects (loops) at the edge of the regrown amorphous region. The former defects were deep-level donors present in high concentrations (〉1017 cm−3) after regrowth of the amorphous layer at 600 or 700 °C and resulted in leakage currents 〉10−4 A/cm2. These centers could be annealed out at 800 °C reducing the leakage current to values between 5×10−8 and 2×10−5 A/cm2 depending upon the relative locations of the extended defects and the metallurgical junction. Measurements and modeling have shown that the location of the band of extended defects is critical in controlling the leakage current and that it will need to be a few hundred angstroms shallower than the junction itself for the associated generation current to be fully suppressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337613
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  • 9
    Electronic Resource
    Electronic Resource
    Mobile ion effects in low-temperature silicon oxides (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 187-190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mobile ions in oxides formed on silicon by low-temperature processes have been studied using a combination of bias-temperature stress and triangular voltage sweep experiments. It is found that these oxides contain intrinsically low concentrations of mobile ions (〈1010 cm−2) and that the ionic instabilities which are seen are due to alkali metal ions rather than other contaminants or the inherent water and hydrogen. Mobile sodium behaves slightly differently in low-temperature oxides compared with conventional thermal oxides, and can be gettered and passivated using a low-temperature process. It is shown that sodium ions are trapped by polycrystalline silicon during plasma hydrogenation, and that atomic hydrogen is involved in this process. The trapped ions are released back into the oxide during subsequent bias-temperature stressing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343902
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  • 10
    Electronic Resource
    Electronic Resource
    A comparison between Sb and As implantation for the formation of highly conducting shallow silicon layers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3441-3443 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly conducting silicon layers of less than 500 A(ring) in thickness have been formed following the implantation of 12-keV antimony or 10-keV arsenic and subsequent annealing at 700 °C for 15 min. Minimum resistivities of 2.2×10−4 Ω cm for antimony and 6.5×10−4 Ω cm for arsenic at a dose of 1×1015 cm−2 are obtained, with corresponding peak electrical activities of ∼4.8×1020 cm−3 and ∼1.6×1020 cm−3, respectively. Both correspond to metastable states well above the equilibrium solid solubilities. Whereas the arsenic activity remains almost unchanged for anneals of up to ∼300 min, the higher antimony activity decreases, but remains above that of the arsenic.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339310
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