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  • 1
    Electronic Resource
    Electronic Resource
    Determination of metals in waters and organic materials by flameless atomic absorption spectrometry with a wire loop atomizer (1979)
    s.l. : American Chemical Society
    Analytical chemistry 51 (1979), S. 2370-2375 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac50050a018
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  • 2
    Electronic Resource
    Electronic Resource
    Coexisting photoluminescence of Si and Ge nanocrystals in Ge/Si thin film (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5318-5321 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of composite germanium/silicon (Ge/Si) were prepared by pulsed laser ablation alternately on Ge and Si materials on a rotary target, followed by vacuum deposition of the ablated materials on an ultraclean glass substrate. X-ray diffraction and atomic force microscopy phase analysis confirmed that the film structure consisted of a mixture of Si and Ge nanoparticles which could exist in two possible phases. Most of the particles are of less than 30 nm in diameter even after the sample was annealed at 500 °C for 6 h. With different excitation light of wavelengths 280 and 380 nm the composite film yielded independent photoluminescence emissions corresponding, respectively, to the Si and Ge nanoparticles which did not interfere with each other. These results demonstrate that there was very little interaction between the Si and Ge emissions arising from their coexisting mixture in the thin film, even after high temperature annealing of the film in the atmosphere. It opens up the possibility for application of the Si/Ge composite film in multiple function optoelectronic devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412269
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of Li substitution on the crystal structure and magnetoresistance of LaMnO3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5915-5919 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystal structure and magnetoresistance of the polycrystalline La1−xLixMnO3 (x=0.10, 0.15, 0.20, 0.30) are investigated. The result of the Rietveld refinement of x-ray powder diffraction shows that the room temperature structural transition from rhombohedral (R3¯C) to orthorhombic (Pbnm) symmetry occurs at the Li-doped level x≥0.2. Accompanying the occurrence of the structural transition, the lattice distortion and the bending of the Mn–O–Mn bond increase and the ferromagnetic transition temperature TC decreases. For x=0.10 and 0.15 samples, double metal–insulator (M–I) transitions accompanying a single ferromagnetic transition and a negative magnetoresistance as high as 26% in a magnetic field of 0.8 T are observed. For x=0.20 and 0.30, the samples manifest nonmetallic behavior throughout the measured temperature range. We suggest that the double M–I transitions phenomena of low Li-doped samples originate from the magnetic inhomogeneity due to the formations of the Mn3+ and Mn4+-rich regions induced by partial substitution of the monovalent Li1+ ions for the trivalent La3+ ions. The transport property of high Li-doped samples (x=0.20 and 0.30) can be explained according to the additional localization of eg electrons induced by a static coherent Jahn–Teller distortion of the MnO6 octahedra stemming from the structural transition from rhombohedral (R3¯C) to orthorhombic (Pbnm) and the reduced bandwidth of eg electrons due to the increased bending of the Mn–O–Mn bond. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319971
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of Cu doping on the magnetoresistive behavior of double perovskite Sr2FeMoO6 polycrystals (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4421-4425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical, magnetic, and transport properties of Cu-doped polycrystalline samples Sr2Fe1−xCuxMoO6 with ordered double perovskite structure have been investigated systematically. Analysis of the x-ray powder diffraction pattern based on the Rietveld analysis indicates that the substitution of Fe3+ ions by Cu2+ ions enhances the site location order of Fe, Cu, and Mo on the B site for the high-doping-level samples (x=0.20, 0.25, 0.30). With increasing doping level, a transition from semiconductor to metal behavior was also found to occur. Furthermore, the transition temperature was found to decrease either by the application of a magnetic field or by increasing the doping level. It can be concluded that the existence of Cu2+ ions induces the occurrence of Fe3+δ ions and the double exchange interaction in Fe3+–O–Mo–O–Fe3+δ. The transport mechanism in these samples can be attributed to the competition between the metal phase and the semiconductor phase arising from the doping of Cu2+ ions. Both the semiconductor-to-metal transition and the magnetoresistive behavior can be explained by the percolation threshold model. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454207
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  • 5
    Electronic Resource
    Electronic Resource
    Enhanced intergrain tunneling magnetoresistance in double perovskite Sr2FeMoO6 polycrystals with nanometer-scale particles (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3853-3855 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline ordered double perovskite Sr2FeMoO6 bulk samples with grain size in the range of 29–45 nm have been synthesized at temperatures from 900 to 1000 °C, using a sol-gel method. We find that the intergrain magnetoresistance is closely correlated with the grain size. The sample with the grain size of 29 nm shows large magnetoresistance Δρ/ρ0, 30%–20% at a low magnetic field of 4 kG over a wide temperature range from 20 to 300 K. The results can be explained in terms of spin-dependent intergrain tunneling model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125478
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  • 6
    Electronic Resource
    Electronic Resource
    Spectrophotometric and fluorimetric enzymatic determination of serum creatine kinase mb isoenzyme by using immuno-inhibition
    Amsterdam : Elsevier
    Analytica Chimica Acta 134 (1982), S. 47-53 
    Details
    ISSN: 0003-2670
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/S0003-2670(01)84176-3
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