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  • 1
    Electronic Resource
    Electronic Resource
    Interband magnetooptic absorption line shape in bismuth (1997)
    Springer
    Semiconductors 31 (1997), S. 350-353 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The results of an investigation of the transmission of a symmetric bismuth stripline at T=80 K at the laser wavelength λ=10.6 µm in magnetic fields up to B=8 T are reported. A set of parameters is obtained for the energy spectrum of the L electrons of bismuth by modeling the shape of the experimental curve on the basis of a modified Baraff model. The values of the parameters in the McClure-Choi model are found from an analysis of the field positions of the maxima of the mageto-optic oscillations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187161
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  • 2
    Electronic Resource
    Electronic Resource
    The magnetoplasma effect in single crystals of antimony at T⩾80 K (1998)
    Springer
    Semiconductors 32 (1998), S. 1173-1174 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Transmission spectra of infrared laser radiation (λ=10.6 µm) passed through samples consisting of two symmetric halves of an antimony single crystal separated by a small gap are investigated in pulsed magnetic fields B⩽20 T at temperatures T⩾80 K. The magnetoplasma effect was observed for the magnetic induction B≈15 T, with change in the transmission close to 100%. The magnetoplasma relaxation time has been determined. The possibility of using such objects as IR optical valves with response time not worse than 10−4 s is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187585
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  • 3
    Electronic Resource
    Electronic Resource
    Magneto-optical study of bismuth at 80–280 K (2000)
    Springer
    Semiconductors 34 (2000), S. 1287-1289 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Infrared transmission (λ=10.6 µm) of samples consisting of two symmetric plane-parallel halves of a Bi single crystal separated by a gap were studied in a pulsed magnetic field. Oscillations associated with interband optical transitions involving Landau levels were observed at 80–280 K. The temperature dependences of the energy gap, effective masses, and relaxation time of carriers were determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1325424
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  • 4
    Electronic Resource
    Electronic Resource
    Structural phase transitions in the Cs3Sb2I9 crystal (1997)
    Springer
    Physics of the solid state 39 (1997), S. 846-848 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A sequence of two phase transitions at 85.3±0.6 K and 72.6±0.4 K is observed in hexagonal Cs3Sb2I9. The NQR spectra of 127I are analyzed, optical polarization studies are made, and the thermal properties, linear expansion coefficients, and stiffness constants are measured over a broad range of temperatures below room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129982
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  • 5
    Electronic Resource
    Electronic Resource
    Inversionless superradiance of an ensemble of three-level atoms in a high-Q cavity (1999)
    Springer
    Journal of experimental and theoretical physics 88 (1999), S. 278-285 
    Details
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We analyze the possibility of superradiance in an ensemble of three-level atoms in the absence of population inversion. We show that in the case of a Λ configuration of the active transitions this effect can occur for an initially coherent superposition of the states of the lower doublet. We also study how splitting of the lower levels influences this effect and discuss ways of creating low-frequency coherence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.558795
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  • 6
    Electronic Resource
    Electronic Resource
    Ferroelectric phase transition in Cs3Bi2I9 (1997)
    Springer
    Physics of the solid state 39 (1997), S. 1652-1654 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Single crystals of Cs3Bi2I9 have been grown. Polarized-optical, dielectric, and calorimetric studies have been performed, along with measurements of birefringence, and the coefficients of elasticity c 44, and linear expansion a over a wide temperature range. It is found that an intrinsic (pseudo-intrinsic) second-order phase transition to the ferroelastic phase takes place at T 0=220.0±0.6 K accompanied by a change of the crystal symmetry from 6/mmc to 2/m. The transition parameter depends linearly on the shear strain x 5 and varies with temperature according to a power law with exponent β=0.5.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129882
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  • 7
    Electronic Resource
    Electronic Resource
    Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1478-1481 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An x-ray diffraction study of defect formation in silicon irradiated by Kr+ (210 MeV, 8×1012−3×1014 cm−2) and Xe+ (5.6 BeV, 5×1011−5×1013 cm−2) ions is reported. It has been established that irradiation produces a defect structure in the bulk of silicon, which consists of ion tracks whose density of material is lower than that of the host. The specific features of defect formation are discussed taking into account the channeling of part of the ions along the previously formed tracks and the dominant role of electron losses suffered by the high-energy ions. It is shown that the efficiency of incorporation of stable defects by irradiation with high-energy ions is lower than that reached by implanting medium-mass ions with energies of a few hundred keV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130580
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  • 8
    Electronic Resource
    Electronic Resource
    Sediment transport to the Laptev Sea–hydrology and geochemistry of the Lena River (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Polar research 15 (1996), S. 0 
    Details
    ISSN: 1751-8369
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geography , Geosciences
    Notes: This study focuses on the fluvial sediment input to the Laptev Sea and concentrates on the hydrology of the Lena basin and the geochemistry of the suspended particulate material. The paper presents data on annual water discharge, sediment transport and seasonal variations of sediment transport. The data are based on daily measurements of hydrometeorological stations and additional analyses of the SPM concentrations carried out during expeditions from 1975 to 1981. Samples of the SPM collected during an expedition in 1994 were analysed for major, trace, and rare earth elements by ICP-OES and ICP-MS. Approximately 700 km3 freshwater and 27 times 106 tons of sediment per year are supplied to the Laptev Sea by Siberian rivers, mainly by the Lena River. Due to the climatic situation of the drainage area, almost the entire material is transported between June and September. However, only a minor part of the sediments transported by the Lena River enters the Laptev Sea shelf through the main channels of the delta, while the rest is dispersed within the network of the Lena Delta. Because the Lena River drains a large basin of 2.5 times 106 km2, the chemical composition of the SPM shows a very uniform composition. In contrast, smaller rivers with more restricted catchment areas exhibit significant differences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1751-8369.1996.tb00468.x
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  • 9
    Electronic Resource
    Electronic Resource
    Dielectric properties of rutile and its use in high temperature superconducting resonators (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6683-6686 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microwave properties of single crystalline TiO2 (rutile) were investigated. At a frequency of 7.5 GHz the loss tangent tan δ was found to increase from 1.4×10−7 at 4 K to 4×10−6 at 70 K for electric fields parallel to the crystallographic a,b plane. The high permittivity of 105 and the small tanδ in combination with the low microwave losses of high temperature superconductors (HTS) were utilized to construct a miniaturized X-band resonator with a high quality factor Q. An assembly of two YBa2Cu3O7 films of 8 mm in diameter separated by a rutile cylinder of 2 mm height provides a TE011 resonance at 9.7 GHz with Qs ranging from 6×105 at 10 K to 105 at 70 K. Frequency scaling of the losses in rutile and in the HTS films indicates Qs in excess of 106 at 1.8 GHz using YBa2Cu3O7 films of two inches in diameter. Such resonators are considered to be key elements for high-power filters in mobile communications. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360490
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  • 10
    Electronic Resource
    Electronic Resource
    Microwave measurements of the absolute London penetration depth in double-sided YBa2Cu3O7−x thin films on sapphire (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 335-344 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The absolute values of the London penetration depth λL, were measured in epitaxial (001) YBa2Cu3O7−x (YBCO) thin films prepared by simultaneous sputter deposition on both sides of 3 in. r-cut sapphire wafers buffered with thin (001) CeO2 layers. The measurements were performed by using a technique, which is based on the effect produced on the quality factor Q of a microwave disk resonator by a gold layer deposited on the YBCO electrodes. The observed change of Q can be transformed into λL value with an accuracy determined mainly by the uncertainty of the YBCO film thickness. The λL(T) data obtained by this technique revealed a good agreement with the variation of the resonant frequency with temperature, which is conventionally used for measurements of the variation of the effective London penetration depth ΔλL eff(T) with temperature. At temperatures above ∼60 K this λL(T) dependence was very close to the predictions of the Gorter–Casimir model. At lower temperatures a linear λL(T) behavior was observed with the slope higher for thinner YBCO films. The absolute λL values were higher than those reported in literature for λab (screening currents flow in the crystallographic a–b plane) of YBCO single crystals. For example, our measured λL (4.2 K) values were in the range of 195–220 nm compared to literature data for λab quoted around 140 nm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435842
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