ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The generation rates and annealing behavior of the irradiation defects in n- and p-type hydrogen-grown float-zoned silicon (irradiated with γ rays from 60Co) have been studied by the deep-level transient spectroscopy technique and compared with those of irradiated argon-grown float-zoned silicon. Assuming the generation rate of the irradiation defects created by γ rays in argon-grown float-zoned silicon is 1, then the generation rates of the A center, divacancy, and phosphorus vacancy in n-type hydrogen-grown float-zoned silicon are 0.23, 0.78, and 0.19, respectively, while the generation rates of the divacancy and H(0.37 eV) in p-type hydrogen-grown silicon are 0.79 and 0.10, respectively. Due to the existence of hydrogen, the generation rate reduction of the major irradiation defects in γ-ray irradiated silicon is more pronounced than that in 1-MeV electron irradiated silicon. Three hydrogen-related defects, H(0.10 eV), H(0.29 eV), and H(0.56 eV), were seen in γ-ray irradiated hydrogen-grown float-zoned silicon, among which H(0.10 eV) and H(0.56 eV) were reported by us to exist in electron irradiated hydrogen-grown float-zoned silicon, while H(0.29 eV) is reported for the first time. The convergence effect of annealing temperatures for the irradiation defects was observed. That is, the annealing temperatures at which the irradiation defects diminish are almost the same for most irradiation defects, similar to that in the case of electron irradiation, was observed, showing that this effect is characteristic of the hydrogen behavior in silicon, and irrelevent to the type of irradiation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351285
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