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  • 1
    Digitale Medien
    Digitale Medien
    s.l. : American Chemical Society
    Journal of medicinal chemistry 21 (1978), S. 597-598 
    ISSN: 1520-4804
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1832-1834 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This work reports the temperature dependence of electronic conduction in thin nitrided oxides for temperatures ranging from 298 to 423 K. It was found that the conduction currents in the nitrided oxides have different temperature dependencies from those of conventional thermal oxides. At low electric fields (∼6 MV/cm), the temperature dependencies of the nitrided oxides can be divided into two segments which are attributed to the shallow trap-assisted conduction for temperature less than 400 K and Poole–Frenkel or thermionic emission for temperatures greater than 400 K, whereas the temperature dependence of thermal oxide is governed by exp(−0.143/kT) for the entire temperature range of this study. At high electric fields (∼12 MV/cm), the conduction current of nitrided oxides is mainly governed by Fowler–Nordheim tunneling for temperatures less than 340 K. In studying the temperature dependencies of the electronic trapping in nitrided oxides, we found that the density of trapped charge decreases as large as 27.8% for temperatures rising from 298 to 423 K. It indicates that the density of traps at energy levels less than 0.036 eV (measured from the conduction band of the nitrided oxide) is significantly larger than that of thermal oxides.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 3884-3890 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We report on studies of the structure and dissociation of CaCH4+ and its isotopomer CaCD4+, using photodissociation spectroscopy. Molecular absorption bands are observed to the red of the Ca+ (4p 2P←4s 2S) resonance transition. The photodissociation action spectrum shows evidence for spin–orbit doubling and complex rovibrational structure. No reactive quenching product is observed. The transition is assigned as 2E←2A1 in C3v geometry. The spin–orbit constant in the upper state is found to be Aso=111±4 cm−1. The action spectrum shows a strong progression in the Ca+–CH4 (CD4) intermolecular stretch in the 2E state with a fundamental stretch frequency of ωs′=270±16(244±4) cm−1. Weaker intermolecular bending vibration is also apparent, with a fundamental bending frequency of ωb′=112±16(92±14) cm−1 for Ca+–CH4(CD4). The resonances show evidence for predissociation broadening. These results differ markedly from our previous results on the analogous MgCH4+ system. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2285-2296 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The weakly bound ion–molecule complex MgC2H4+ has been studied by photodissociation spectroscopy in a reflectron time-of-flight mass spectrometer over the spectral range 218–510 nm. Mg+ is the major photofragment throughout this range, although for λ〈270 nm, charge-transfer dissociation to C2H4+ is observed as a minor channel. We have identified five absorption bands of MgC2H4+. The spectral assignment is facilitated by results from ab initio calculations for the ground and low-lying excited states of MgC2H4+. Three of the bands, 1 2B2←1 2A1, 1 2B1←1 2A1, and 2 2A1←1 2A1, are based primarily in the metal-centered Mg+(3p 2P←3s 2S) atomic transition. One of the remaining bands is assigned as 2 2B2←1 2A1, a transition correlating with the a 3B1u←X 1Ag forbidden band of C2H4, with mixed charge-transfer character. The final band, 3 2A1←1 2A1, is assigned to a metal-to-ligand charge-transfer transition, enhanced by coupling with the nearby 2 2A1 state. The 1 2B2←1 2A1 band is a broad continuum, indicative of fast predissociation in the upper state. A nonadiabatic dissociation mechanism involving C(Double Bond)C π-bond activation by Mg+(3p) is suggested by ab initio calculations. The 1 2B1←1 2A1 band shows pronounced vibrational structure with a strong progression in the Mg+–CH4 intermolecular stretch (ν2), and weaker progressions assigned to combination bands built on the intermolecular out-of-plane wag (ν3), and a CH2–CH2 wag (ν7). The observed vibrational constants are ω2=329, x22=−2.3, ω3=439, and ω7=1024 cm−1. Measurement of the photofragment kinetic energy release determines the bond dissociation energies for the ground state [D0″(Mg+–C2H4)=0.7±0.2 eV], and for the 1 2B1 excited state, [D0′(Mg+–C2H4)=1.8±0.2 eV]. Spectroscopic constants are in good agreement with ab initio predictions. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 3758-3765 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We have studied the dissociation dynamics of Mg2CH4+ ion–molecule clusters through mass-resolved photodissociation spectroscopy, coupled with translational energy spectroscopy. We have observed distinct molecular absorption bands in the red (690–615 nm) and green (580–545 nm) spectral regions. Mg+ is the dominant fragmentation product in each band. We observe a significant energy release into relative translation and a pronounced photofragment anisotropy (β〉0), consistent with a rapid dissociation. Based on the observed anisotropy and the result of an ab initio structure calculation, we assign the red band to the parallel transition 2 2A′←1 2A′ and the green band to a combination of 1 2A′′←1 2A′ and 3 2A′←1 2A′ transitions, all in Cs symmetry. These results are compared with earlier results from the photodissociation spectroscopy of the more strongly bound Mg2CO2+ and Mg2H2O+ bimolecular complexes. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 6452-6459 
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: The photodissociation spectroscopy of MgCH+4 has been studied in a reflectron time-of-flight mass spectrometer. MgCH+4 molecular absorption bands are observed to the red of the Mg+(3 2PJ←3 2S1/2) atomic ion resonance lines. The photofragmentation action spectrum consists of a broad structureless continuum ranging from 310 nm to 342 nm, and peaking near 325 nm. In this spectral region, both the nonreactive (Mg+), and two reactive fragmentation products (MgH+ and MgCH+3) are observed, all with similar action spectra. The product branching is independent of wavelength, Mg+:MgCH+3:MgH+∼60:33:7. The absorption is assigned to the transition (1 2E←1 2A1) in C3v symmetry (with η3 coordination), followed by a geometrical relaxation of the complex toward states of 2B1 and 2B2 symmetry in C2v geometry (with η2 coordination). Dissociation requires a nonadiabatic transition to the ground electronic surface. Analysis of broadening in the photofragment flight time profile shows the nonreactive Mg+ product angular distribution to be isotropic, with an average translational energy release which increases slightly from Et∼370±150 cm−1 at 332.5 nm to Et∼520±180 cm−1 at 315 nm. These values are less than 2% of the available energy and are well below statistical expectations. Analogous experiments on MgCD+4 show the kinetic energy release in the nonreactive channel to be significantly larger for the CD4 case, ranging from Et∼540±180 cm−1 at 332.5 nm to Et∼830±200 cm−1. These results clearly demonstrate that the dissociation is nonstatistical. Preliminary ab initio potential surface calculations suggest a possible dynamical mechanism to explain these unusual results. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 797-802 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Conduction enhancement characteristics and the conduction mechanism in nitroxide are reported in this paper. Thermally grown oxides with various thicknesses were nitrided in pure ammonia for different nitridation times. Conduction in thick oxide after short-time nitridation is dominated by Fowler–Nordheim tunneling with lowered barrier height. A trap-assisted tunneling model was used to explain the effect of the degree of nitridation on current enhancement in heavily nitrided films. A theoretical calculation was carried out to fit the theory to the experimental results, and the trap density and trap energy level were found to be in the ranges of 1.2×1019–7.2×1020 cm−3 and 2.46–2.56 eV, respectively. These results are explained satisfactorily by the Auger spectroscopic data.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2387-2392 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A closed-form analytical expression is derived to predict the threshold voltage of a narrow-gate metal-oxide-semiconductor field-effect transistor with a fully recessed field-isolation structure. The calculation is based on a simple conformal transform and a physical model employing the depletion approximation. The physical origin of the inverse narrow-gate effect is mentioned. Threshold-voltage variations under the influence of various physical parameters are discussed, and a comparison with published data shows that the present model is useful.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 312-316 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This paper presents the first attempt in correlating the low-frequency noise with the surface characteristics of metal films prepared by sputtering of copper onto oxidized-silicon and sapphire substrates. Results show that the noise behaviors and the surface physics of the metal films on these two kinds of substrates are different from each other. Particularly, the spectral slope of noise spectrum not only depends on the substrate but also on the thickness and surface area of the metal films. These observations suggest that the low-frequency noise of metal film, being governed by the surface roughness and irregularity of the sample, should be a surface effect. In addition, a number fluctuation model based on the electron tunneling between the hillocks at the surface is proposed to explain the observations.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1607-1609 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The basic assumptions of a recent model of the rapid initial oxidation of silicon by Schafer and Lyon are examined. It is found that the hypothesis is inconsistent with existing experimental data. Instead, our previous model on initial oxidation is used to satisfactorily explain their experimental data. The charge density at the interface and the equilibrium concentration of oxygen in the oxide are estimated based on this model, which agrees well with measured results. These comparisons suggest that our previous model of oxidation gives an overall satisfactory picture of the rapid initial thermal oxidation of silicon.
    Materialart: Digitale Medien
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