Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Γ to Xz electron transfer times in type-II superlattices due to emission of confined phonons (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1281-1283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the Γ→Xz electron transfer times due to the emission of confined longitudinal optical phonons in type-II GaAs-AlAs and AlGaAs-AlAs superlattices. A dielectric continuum model is employed to describe the electron-confined-phonon interaction and the electron envelope wave functions are obtained from a Kronig–Penney model. The calculated transfer times compare within order of magnitude, or better, with available experimental results and we obtain a good qualitative description of the transfer time dependence on the layer thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112095
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence measurements of complex defects in Si-doped Al0.3Ga0.7As (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8051-8054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of a Si-doped Al0.3Ga0.7As alloy are studied as a function of the Si dopant concentration by means of photoluminescence measurements. The photoluminescence spectra show peaks due to electron Si acceptors and Si-related complex-defects transitions, which we tentatively attribute to Si acceptor coupled to an As vacancy (SiAs-VAs) and Si donor coupled to a Ga(Al) vacancy (SiIII-VIII). We show that the importance of each of these defects to the alloy optical properties is strongly dependent on the growing parameters. Spectrum for a planar-doped sample also showing peaks related to Si complex defects is presented. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357875
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Carrier capture processes in semiconductor superlattices due to emission of confined phonons (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6306-6312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier capture times due to the emission of confined longitudinal optical phonons via electron–phonon (Fröhlich) interaction are calculated for GaAs-AlxGa1−xAs and In0.47Ga0.53As-InP superlattices. A dielectric continuum model is used to describe the confined phonon modes and we use a Kronig–Penney type calculation for the electron envelope functions. We compare our results with capture times measured by several optical techniques and we discuss the importance of a knowledge of the carrier excitation details in order to obtain an appropriate interpretation of the experimental results. We show that electrons excited into confined states with a large kinetic energy strongly influence the overall capture times. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359099
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...