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  • 1
    Electronic Resource
    Electronic Resource
    Prolonged and rapid thermal annealing of boron implanted silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2696-2699 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We studied the annealing of silicon substrates implanted with a medium dose of boron ions (3×1014 cm−2, 150 keV) employing conventional furnace annealing (FA) and rapid thermal annealing (RTA) processes performed in a nitrogen atmosphere. The annealing efficiency was monitored by visual inspection of the implanted surface with an optical microscope after steam oxidation and Secco etching. The FA is more efficient when performed at a high temperature, but even so, it is not capable of suppressing completely the implantation damage. On the other hand, the RTA was observed to be more efficient than any FA cycle. We discuss this fact taking into account the influence of the very high heating rates (∼250 °C/s) the samples underwent during the RTA cycle on the annealing behavior of implantation damage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341610
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced damage accumulation in carbon implanted silicon (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3596-3597 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accumulation of damage in Si implanted with 12C+ was investigated experimentally using aligned Rutherford backscattering analysis. The damage profiles in Si implanted with 12C+ or 11B+ at 50 keV to the same doses and dose rate were compared. It was found that the damage accumulates at a noticeably higher rate by 12C+ implantation than by 11B+, especially for doses (approximately-greater-than)2×1015 cm−2. In order to explain our results we suggest that self-interstitial Si atoms are captured by the implanted C atoms, forming complex defects which are stable at room temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111209
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical activation of boron coimplanted with carbon in a silicon substrate (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6599-6602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the electrical activation in B+ (5.0×1014 cm−2 at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times lower than that of B+ is not sufficient to influence the activation behavior of B. However, C+ implanted to a dose equal to or ten times higher than the B+ dose contributed, respectively, to the reduction or enhancement of the electrical activation of B after annealing in the temperature range of 450–700 °C. In addition, the reverse annealing of B is attenuated in the coimplanted samples and suppressed in samples where the C+ implantation damage was annealed prior to the B+ implantation. At temperatures (approximately-greater-than)700 °C the electrical activation is not significantly affected by the C+ coimplantation. A model considering interaction between C and Si self-interstitial atoms during thermal annealing is proposed to account for the activation behavior of B in the dually implanted samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355098
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical activation of bismuth implanted into silicon by rapid thermal annealing and kinetics of defects (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 119-122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid thermal annealing (RTA) of Si implanted with Bi+, to a dose of 5.0×1014 cm−2 at the energy of 150 keV, was investigated using sheet resistivity, Hall measurements, and channeling analysis. Approximately 95% of the Bi dose is found substitutional and 90% is electrically active after annealing is performed at 600 °C for times longer than 1 min. The electrical activation yield of Bi after RTA at temperatures ≥700 °C is observed to decrease when increasing the temperature and time of the annealing process. The data taken from electrical measurements and angular scan across the 〈100〉 axis are evidence that the electrically inactive concentration of the Bi correlates with the concentration of Bi atoms located slightly displaced from the crystal rows.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354142
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical resistivity of bismuth implanted into silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3453-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., ρ(Sb)≤ρ(P)≤ρ(As)≤ρ(Bi). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361393
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  • 6
    Electronic Resource
    Electronic Resource
    Outdiffusion of Be during rapid thermal annealing of high-dose Be-implanted GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6589-6591 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The outdiffusion of Be implanted into GaAs has been found to be identical after capless or capped (Si3N4 or SiO2 ) rapid thermal annealing (RTA) at 900–1000 °C and to depend on the Be dose and its proximity to the surface. The outdiffusion is more pronounced when the Be implant is shallow (〈0.1 μm) and/or the Be+ dose is high (〉1×1015 cm−2 ). It is demonstrated that the Be outdiffusion is driven by the presence of a highly damaged surface layer. Auger results suggest the formation of a BeOx compound at the surface of a high-dose (1×1016 cm−2 ) Be-implanted sample that underwent capless RTA at 1000 °C/1 s. It appears that BeOx formation occurs when the outdiffused Be interacts with the native Ga/As oxides during annealing. All the Be remaining in the GaAs after a 〉900 °C/2 s RTA is electrically active.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345093
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  • 7
    Electronic Resource
    Electronic Resource
    Recrystallization behavior of silicon implanted with iron (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5423-5426 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid phase epitaxial growth (SPEG) of amorphized Si layers implanted with Fe (1×1015 cm−2, 100 keV) was investigated in the temperature range from 500 to 550 °C using Rutherford backscattering spectrometry. The push-out of Fe atoms by the moving amorphous-crystalline (a-c) interface was observed during annealing, and enhancement of the recrystallization rate was induced by the presence of Fe. These results are discussed in terms of a model that assumes that Fe atoms are trapped in the amorphous layer and released when they are reached by the moving a-c interface during the SPEG process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350564
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  • 8
    Electronic Resource
    Electronic Resource
    Mechanical strain and damage in Si implanted with O and N ions at elevated temperatures: Evidence of ion beam induced annealing (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 42-46 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accumulation of damage and the development of mechanical strain in crystalline Si (c-Si) by O and N ion implantation to doses up to 4×1017 cm−2 at elevated temperatures have been studied using Rutherford backscattering spectrometry and high resolution x-ray diffraction. The implantation of O or N ions at high temperatures produces two distinct layers in the implanted c-Si: (i) a practically damage-free layer extending from the surface up to (similar, equals) half of the depth of the mean projected range (Rp) and presenting negative strain (of contraction); and (ii) a heavily damaged layer located around and ahead of the Rp with no significant strain. Both the damage distribution and the magnitude of the strain were found to be dependent on the ion species implanted. We proposed that besides the spatial separation of Frenkel pair defects due to the mechanics of the collision processes and the intensive dynamic annealing, an ion beam induced annealing process also participate in the formation of the near-surface damage-free layer during high temperature implantation of c-Si. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330254
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  • 9
    Electronic Resource
    Electronic Resource
    Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5909-5911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical activation of In of 18%–52% of the implanted dose (5×1014 cm−2) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield markedly contrasts with that in samples singly implanted with In in which only ≅0.5% of the dose was activated. The following features were observed in the coimplanted samples: (i) a reverse annealing of the electrical activation in the temperature range of 800–900 °C; (ii) significant reduction of the In profile redistribution during RTA; and (iii) the electrically activated In concentration is substantially higher than the substitutional In concentration. These findings are discussed in terms of the interaction between C atoms and Si self-interstitials (SiI), strain compensation between C and In atoms in the Si lattice, and formation of stable In substitutional–C substitutional acceptors centers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371611
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  • 10
    Electronic Resource
    Electronic Resource
    Damage accumulation in Si crystal during ion implantation at elevated temperatures: Evidence of chemical effects (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8385-8388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage in Si induced by irradiation with various light/medium mass ions at elevated temperatures and high doses (≥3×1016 cm−2) was studied using Rutherford backscattering spectroscopy, cross-section transmission electron microscopy, and high resolution x-ray diffraction. The results obtained have shown that there is a marked variation in the damage accumulation for different ion species. For O+ and N+ ions a distinct layer with a low level of damage presenting negative strain is formed at the surface. It has been found that the magnitude of the strain does not correlate with the energy deposited in the collision cascades. In the cases of Ne+ and Mg+ implantation, a low damage accumulation occurs near the surface but no negative strain is formed. In contrast to the N+ and O+ cases, with the increase of the Ne+ or Mg+ dose (〉1×1017 cm−2) the damage profile stretches almost to the crystal surface. It is proposed that in addition to the mechanism of spatial separation of Frenkel pairs taking place in the collision cascades, the ability of the implanted ions to form precipitates and complexes with Si atoms noticeably influences the damage formation during implantation at elevated temperatures. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373551
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