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  • 1
    Electronic Resource
    Electronic Resource
    Transient effects in ultra shallow depth profiling of silicon by secondary ion mass spectrometry (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 10344-10352 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The significant and often unpredictable variations, or transient effects, observed in the secondary ion intensities of O± and Si± during the initial stages of depth profiling with Cs+ have been studied. These were found to be primarily due to two competing effects: (a) the steady accumulation of Cs in the substrate as a function of sputtering time and (b) the varying oxygen content from the native oxide as a function of depth. These effects prevail over depths approximated by ∼2Rnorm, where Rnorm is the primary ion range normal to the surface. The Cs+ induced effects are consistent with a work function controlled resonance charge transfer process. A method for controlling these effects, namely the prior evaporation of Cs and use of an O2 leak during analysis is described. Doped (As and Sb) and undoped Si wafers with ∼0.9 nm thick native oxides were analyzed using 0.75 and 1 keV Cs+ beams incident at 60°. The more intense polyatomic AsSi− and SbSi− emissions did not exhibit these effects, although other relatively minor intensity fluctuations were still noted over the first ∼0.5 nm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1318197
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  • 2
    Electronic Resource
    Electronic Resource
    Use of Zr- secondary ion energy distributions and factor analysis to construct chemical-state depth profiles in SIMS (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 573-580 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Factor analysis (FA), the multivariate statistical technique, has been used to extract chemical bonding information from SIMS secondary ion energy distributions. The method is outlined in detail and shown to be capable of constructing quantitative profiles for the chemical states of zirconium present in ZrO2/Zr and ZrNx/Zr structures. In addition, a truncated data collection procedure wherein secondary ion intensity values are collected at a fixed number of emission energy values during the depth profile is outlined. This method, which enables data to be collected in a shorter time and from a smaller sample volume, is subsequently shown to yield reliable results, as confirmed by FA of Auger depth profiles on similar specimens.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740230902
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  • 3
    Electronic Resource
    Electronic Resource
    SIMS imaging of insulator surfaces (1993)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 20 (1993), S. 1000-1006 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Imaging of secondary ions emitted from bare insulator surfaces has been carried out on a Cameca IMS 3F secondary ion mass spectrometer without the use of electron beam, conductive grid or coating methods. This was accomplished by analysing secondary ions with kinetic energies ranging from 200 to 350 eV emitted from chargestablized samples. Charge stabilization was attained by placing the sample under various forms of specimen isolation. Images from both O- and Cs+ primary ion-bombarded surfaces were collected, with several examples shown; O- provided the better spatial resolution due to improved sample potential stability. Mechanisms associated with charge stabilization and image distortion are elaborated upon with the aid of computer simulations.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740201211
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  • 4
    Electronic Resource
    Electronic Resource
    Topographic Correction of 3D SIMS Images (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 788-789 
    Details
    ISSN: 0142-2421
    Keywords: SIMS ; topography ; AFM ; imaging ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In order to provide an accurate rendition of a three-dimensional (3D) volume obtained by SIMS, it is necessary to take account of the topography of the original surface and the relative sputter rates of the different structures within the volume. We describe a method that corrects both distortions to 3D SIMS images. An atomic force microscope is used to produce a topographic images of the area analysed by SIMS, both before and after the depth profile. This information is convoluted with the 3D SIMS image to produce a correct 3D image of the changes in composition within the volume of the material. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 5
    Electronic Resource
    Electronic Resource
    The infinite velocity method: A new method for SIMS quantification (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 747-757 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Twelve elements spanning a mass range of 197 atomic mass units from five standard reference materials and three implant materials were analysed to ascertain the validity of a new method, termed the infinite velocity method, for quantifying the negative monatomic secondary ion emissions resulting from Cs-bombarded surfaces. This method extracts quantitative data by extrapolating secondary ion yield versus kinetic energy data to the infinite velocity limit. Extrapolation to infinite velocity is done because matrix effects are theoretically predicted to be removed at this limit. Plotting the extrapolated data against known concentrations for the homogeneous standard reference materials yielded linear standardization curves for all elements analysed, indicating that the matrix effect is indeed removed, i.e. sensitivity factors were not required. Likewise, the resulting concentration profiles of the implant materials analysed agreed well with concentration profiles calculated via the integration method. Thus, samples can be quantified by this procedure without the requirement for matrix-matched calibration materials. Theoretical implications and the assumptions used in the calculations are also discussed.
    Additional Material: 12 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740211103
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  • 6
    Electronic Resource
    Electronic Resource
    Application of the infinite velocity method for quantifying negative secondary ion emissions to multi-layered samples (1995)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 163-170 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: This report illustrates, in a stepwise fashion, the application of a new method for quantifying SIMS results (termed the infinite velocity method) to the depth profile analysis of multilayered samples. The two samples analysed comprised a silicon substrate implanted with cobalt and a silicon substrate bearing an oxide layer implanted with boron. Concentrations were extracted by: sampling the secondary ion emissions over several kinetic energies during the depth profile; correcting the resulting intensities for instrument transmission and sputter yield effects, so that these may be poltted against the inverse of the velocity; and referencing the point at which the resulting curves intersect with the intensity axis (intensity at infinite velocity) to an element whose concentration is known, or to the sum of all major element intercept data. Characteristic velocity data obtained from each cycle of the depth profiles were also used to illustrate a new method for defining the position of the interface. To illustrate the validity of these results, peak concentrations were compared with those calculated via the integration method as well as Auger depth profile analysis.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740230307
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  • 7
    Electronic Resource
    Electronic Resource
    Charge stabilization and ion trapping under specimen isolation conditions during Sims analysis (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 18 (1992), S. 262-268 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Specimen isolation (SI), an extreme form of kinetic energy filtration, has been shown to be an effective tool for controlling the problems of sample charging and molecular interferences often encounted in secondary ion mass spectrometry (SIMS). In this study the mechanisms involved in the charge stabilization, under both positive and negative primary beam bombardment, were examined more closely. This was facilitated by the introduction of a resistor into the SI configuration, allowing for in situ sample potential control, and the use of computer simulations. The formation of low-energy ion traps at the sample surface under extreme SI conditions was also directly recorded, showing good agreement with the computer simulations carried out.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740180404
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  • 8
    Electronic Resource
    Electronic Resource
    Characterization of porous titania glass: Raman, x-ray diffraction and x-ray photoelectron spectroscopic studies (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Journal of Raman Spectroscopy 23 (1992), S. 161-166 
    Details
    ISSN: 0377-0486
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Porous titania glass (PTG) was characterized by laser Raman spectroscopy, x-ray diffraction, ultraviolet-visible spectroscopy, photoelectron spectroscopy and transmission electron microscopy. PTG after annealing at 573 K contains amorphous titania and anatase. Heating in air above 693 K causes transformation into the rutile phase. The low transition temperature is attributed to the highly defective nature of PTG.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/jrs.1250230307
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