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  • Artikel: DFG Deutsche Nationallizenzen  (43)
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  • Artikel: DFG Deutsche Nationallizenzen  (43)
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6511-6520 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Data from measurements of optical absorption, photoconductivity, dark conductivity, thermally stimulated conductivity (TSC), and thermoluminescence (TL) on samples of undoped and Ga-doped, Czochralski-grown Bi12GeO20 single crystals are reported. The photoconductivity is n type, and the dark conductivity is p type. Undoped BGO exhibits a broad, band-edge absorption due to the optical excitation of electrons to the conduction band which gives the samples a yellow coloration. This absorption is reduced by the addition of Ga which acts as a compensating acceptor. When illuminated with light into this absorption band, but with photons of energy less than the band gap, photoexcitation of electrons occurs. These become trapped, inducing additional absorption and photoconductivity bands and TSC signals, but not TL. Excitation with photons of energy greater than the band gap induces both TSC and TL. Examination of the TSC and TL signals as a function of excitation wavelength allows the distinction between electron and hole trapping states for which trapping parameters have been determined. In addition, dark conductivity reveals three major hole states at energies of ∼Ev+1.41, ∼Ev+0.86, and ∼Ev+0.54 eV. These are believed to be empty donor states. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6521-6533 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The analysis of thermally stimulated conductivity (TSC) measurements performed on "pure'' Bi12GeO20 (BGO) and BGO doped with gallium is presented. The TSC data show many overlapping TSC peaks in the temperature range of interest (80–300 K) which arise from a complex array of trapping states. The TSC signals from both pure BGO and Ga-doped BGO are similar, consisting of a series of large peaks below 160 K and many smaller overlapping peaks between 180 and 300 K. The analysis shows that the large peaks below 160 K in undoped BGO arise from two trapping centers, each characterized by a distribution of activation energies centered at ∼0.24 and ∼0.29 eV, with distribution widths of ∼0.065 eV. In the Ga-doped BGO sample the large peak seen below 180 K arises from a single trapping center at ∼0.29 eV with a distribution width of ∼0.085 eV. Activation energies, frequency factors, and concentrations of trapping states have been determined. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3191-3195 
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A high-speed emitter coupled logic system for fast averaging is described. This system may be used to extract signals from broadband background noise, while preserving harmonic content. Each captured waveform may consist of up to 1024 sample points, and up to 16 kilowaveforms may be accumulated in one cycle. A 20 kilowaveform per second averaging rate is achieved on signals in a 20-kHz to 10-MHz band. The system is used to process the intermediate frequency output of an electro-optic sampling probe in order to recover 14.4-GHz, nonsinusoidal, periodic waveforms from a GaAs integrated circuit.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 249-258 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have measured the temperature dependence of the electron mobility between ∼200 and 300 K in undoped and 0.3% Fe-doped Bi12GeO20 (BGO) and undoped Bi12SiO20 (BSO) using a time-of-flight technique. We found that mobilities calculated from the observed transit times were independent of sample thickness and applied voltage, but depended approximately exponentially on temperature. The hole current transients were very weak and featureless, and consequently we were unable to measure mobilities for holes. The measured drift mobilities varied from 6.1×10−4 to 0.10 cm2/Vs for undoped BGO, 6.1×10−4 to 0.0170 cm2/Vs for 0.3% Fe-doped BGO, and ∼5×10−4 to 0.014 cm2/Vs for undoped BSO. Values of the microscopic mobility were estimated to be 5.9, 2.3, and 1.4 cm2/Vs for undoped, 0.3% Fe-doped BGO, and undoped BSO, respectively. From the temperature dependence of the electron mobility we obtained an activation energy for the dominant trap of Et=0.31 eV for undoped BGO, Et=0.34 eV for 0.3% Fe-doped BGO, and Et=0.31 eV in the undoped BSO sample. These values are interpreted as the trap depth of the main traps dominating the mobility and agree well with values obtained from the analysis of thermally stimulated conductivity measurements performed previously. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 478-480 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A nonzero potential at the backside of a GaAs substrate causes errors in direct electro-optic measurements. We examine how the backside potential depends on the arrangement of the frontside conductors for digital-like structures. Ground-to-ground spacing, or conductor pitch, most strongly determines the magnitude of this electro-optic error. A single driven line in a 30 μm pitch array of grounded parallel lines on 20 mil GaAs contributes a backside potential 3% of the applied signal.
    Materialart: Digitale Medien
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  • 6
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 592-594 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have fabricated a GaAs diode sampling head which has a bandwidth of 130 GHz, which is a five times improvement over previous room-temperature designs. This speed is attained with a monolithic sampling head design integrated with two nonlinear transmission lines which serve as the strobe pulse and test signal generators. A 4 ps transition time has been measured with the sampler. We have also measured sinusoidal waveforms to 120 GHz.
    Materialart: Digitale Medien
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  • 7
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 388-390 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have demonstrated an application of a noninvasive optical probe that can independently measure both free sheet charge density and applied voltage in GaAs devices. Large-signal direct-current measurements of voltage and charge were made on a Schottky diode without any assumption of the device parameters. The measurements are reproducible, and no adjustable parameters have been used to quantitatively measure charge and voltage. In addition to a lateral charge resolution, given by the beam spot size, we have observed a longitudinal resolution due to the standing wave in the probe beam.
    Materialart: Digitale Medien
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  • 8
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 7-9 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Nonzero backside potentials in microwave and digital GaAs circuits lead to small errors in direct electro-optic sampling measurements. We present experimental studies of the magnitude of this error signal as a function of center conductor width for 50 Ω coplanar waveguide transmission lines on a 20 mil substrate. Backside voltages 20 dB below the applied frontside signal are found for typical microwave circuit transmission lines. Calculation of this backside signal with finite difference techniques shows excellent agreement with experiment. Analytic estimates of the backside potential also may be derived in terms of the spatially periodic eigenfunctions for Laplace's equation in the substrate.
    Materialart: Digitale Medien
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  • 9
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1830-1833 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The temperature dependence of the photorefractive effect in undoped and Ga-doped Bi12GeO20 (BGO) crystals was measured over the temperature range from 40 to 300 K. From comparison of the decay curves of the laser-induced grating with thermally stimulated current and photoconductivity curves, we conclude that the major decay step between, ∼100 and ∼160 K, is due to the thermal release of trapped electrons from a distribution of traps centered near 0.3 eV, in both types of BGO sample. Additional thermal decay steps, between ∼200 and ∼300 K, correlate with other electron traps, in the energy range from ∼0.4 to ∼0.7 eV. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
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  • 10
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 349-350 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report an all-silicon fiber-optic light modulator which relies on free-carrier optical dispersion and mode filtering in single-mode fibers. Greater than 10% peak-to-peak intensity modulation over a 200 MHz bandwidth for 10 mA rf current modulation at 1.3 μm wavelength is demonstrated.
    Materialart: Digitale Medien
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