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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5344-5346 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The longitudinal mode behavior of AlGaAs lasers with n-type cladding layers doped with Se and Si is reported. The longitudinal mode of the lasers with highly Se-doped cladding layer is stabilized, and large hysteresis of mode jump is observed as temperature changes. In the case of highly Si-doped cladding layers, however, the mode hops to the adjacent one and no hysteresis is observed. These phenomena are explained by the difference in thermal activation energy between Se- and Si-related DX centers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 36 (1989), S. 0 
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Cell populations of Paramecium bursaria show arhythmic mating reactivity after exposure to constant light (LL) for more than 2 wk. After this arhythmic population is exposed to darkness for 9 h, the mating reactivity rhythm of the cell population reappears. The phases of rhythms in individual cells are synchronized to each other. When the arhythmic population in constant light is exposed to dark pulses of various durations, the first peak of the recovered mating reactivity rhythm appears 6 h after the end of the dark pulse. Thus, in the case of dark pulses to cells in LL, the transition from dark to light sets the phase of the subsequent mating reactivity rhythm. When an arhythmic population in LL is transferred to constant darkness (DD), a rhythm of mating reactivity also appears and, in this case, the first peak of the rhythm occurs 18 h after the LL to DD transition. Therefore, arhythmic populations of cells in LL can be synchronized by either a dark pulse or by transition to continuous darkness. When the arhythmic populations in LL were transferred to various light/dark (LD) cycles, the mating reactivity rhythms entrained to LD cycles of 18 to 30 h in duration. Finally, mating rhythms can also be synchronized by treatment with puromycin (400 μg/ml for 6–18 h).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    British journal of dermatology 136 (1997), S. 0 
    ISSN: 1365-2133
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A patient with skin infection due to Mycobacterium avium is reported. A 9–year–old female had 10 subcutaneous nodules and two ulcers on the abdomen and legs. She had no medical history of systemic disease, skin disease or immunosuppressive therapy. Cultures of a biopsy specimen and of aspirated seropurulent fluid in nodules showed acid–fast bacteria, identified as M. avium by the DNA–DNA hybridization method. We treated her with a combination of surgery and the antibiotics, cycloserine, isoniazid and clarithromycin.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 313-317 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared attenuated total reflection spectra from thin SiO2 films sandwiched between a Ge prism and a Si substrate were investigated. The measurements were performed in the range of Si-O-Si stretching vibrations and compared with calculated spectra using bulk values for the SiO2 dielectric function. This comparison enabled confirmation of the experimentally observed peak broadening and peak shift of the longitudinal-optical-phonon mode at ∼1250 cm−1 for films thicker than 30 A(ring) by using the exact expression for calculating p-polarized spectra. It is also shown that the linear approximation for vibrational spectroscopy in this frequency range is only valid for thicknesses less than 15 A(ring). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3881-3883 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first subband energy at the valence band of self-assembled silicon quantum dots grown by low-pressure chemical vapor deposition on ultrathin SiO2/Si substrates has been measured as an energy shift at the top of the valence band density of states by using high-resolution x-ray photoelectron spectroscopy. The systematic shift of the valence band maximum towards higher binding energy with decreasing the dot size is shown to be consistent with theoretical prediction. The charging effects of the silicon dots and the SiO2 layer by photoelectron emission during the measurements have been taken into account in determining the valence-band-edge energy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1445-1447 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline silicon has been grown by ArF excimer laser (193 nm) induced dissociation of Si2H6 adsorbed on a quartz substrate cooled to −69 °C. Silicon atomic layer growth has also been achieved by controlling the Si2H6 adsorbed layer thickness. It is found that the chemical reactivity of the first one monolayer of Si2H6 in contact with the growing Si surface is extremely high compared to that of the second or third Si2H6 layer. The effective photodissociation reaction rate at 193 nm for the first Si2H6 layer is estimated to be more than 40 times faster than that of an isolated Si2H6 molecule. Such high reactivity of the first monolayer is a possible mechanism of the self-limiting process in the atomic layer growth.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1096-1098 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 981-983 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique of growing nitrided oxide at low temperatures has been developed. Fluorine-enhanced thermal oxidation of silicon in O2+NF3 at temperatures below 800 °C and subsequent annealing of the fluorinated oxide in pure ammonia gas at the same temperature result in the formation of nitrided oxide. The dielectric breakdown strength of the fluorinated oxide is improved by the nitridation. Also, the nitrided oxide acts as a protective layer against alkaline ion contamination.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2616-2618 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon dioxide has been deposited by the glow discharge decomposition of SiH4 and O2 at substrate temperatures below −80 °C, where the thermal reaction on the surface was basically suppressed. Ion flux onto the growth surface was significantly reduced by employing a triode reactor. Oxide deposition onto surfaces with narrow features proceeds from the bottom of a trench or groove and results in planarization of the topography. Such high-fluidity chemical vapor deposition is inferred to occur through the formation of liquified precursors on the cooled surface.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical shifts of Si–Hx (x=1,2) species on Si surfaces obtained by ex situ chemical treatment have been evaluated by high-resolution x-ray photoelectron spectroscopy at a take-off angle of 5°. Optimizing the water rinse and sample loading conditions enables identification of the Si–Hx components of the Si 2p core-level spectra, whose intensities display strong dependence on crystallographic orientation and surface treatment. NH4F-treated Si(111) exhibits almost exclusive monohydride termination which induces a chemical shift of 250 meV relative to the bulk component. On the other hand, 4.5% HF-treated Si(111) and 1% HF-treated Si(100) surfaces show increased dihydride termination with an associated shift of 480 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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