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  • 1
    Electronic Resource
    Electronic Resource
    IcR products of tunnel junctions with depressed order parameter (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 643-644 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: IcRN products of tunnel junctions with depressed order parameters are calculated. It is shown that in contrast to abrupt, classical tunnel junctions, IcRN products of junctions with depressed order parameter are a function of Ic with IcRN(Ic) ≤ πΔ0/2e.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104555
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  • 2
    Electronic Resource
    Electronic Resource
    Spatial imaging of the critical current density in epitaxial Y1Ba2Cu3O7 films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2132-2134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first spatially resolved measurement of the critical transport current density of c-axis oriented epitaxial Y1Ba2Cu3O7 films on 〈100〉 SrTiO3 using low-temperature scanning electron microscopy (LTSEM). The local critical current density, imaged with a spatial resolution of ∼1 μm, has been found to vary considerably in these films. Possible reasons for the observed spatial inhomogeneities are surface imperfections of the substrate and precipitates in the film. The spatial inhomogeneity of the critical current density in epitaxial films might be a reason for differences in the temperature dependences of the critical current density obtained by magnetic and transport measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102346
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  • 3
    Electronic Resource
    Electronic Resource
    Micropatterning of high Tc films with an excimer laser (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1271-1273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Micron-wide lines of high Tc Y-Ba-Cu-O have been successfully patterned by ablating the films with a pulsed excimer laser. The high Tc films are mounted onto a computer-controlled stepping stage and irradiated with a demagnified image of a variable-size rectangular aperture. This technique has been used for fabricating features ranging from several centimeters in length to submicron in width without any degradation in Tc. For example, a superconducting microstructure of Y-Ba-Cu-O, nominally 1 μm wide and 2.5 μm long, with a Tc (R=0) of 88 K and a Jc of 5×104 A/cm2 at 4.2 K was fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99678
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  • 4
    Electronic Resource
    Electronic Resource
    A magnetic field-effect transistor (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1829-1831 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic control of the filamentary current flow during avalanche breakdown in a semiconductor at low temperatures represents an interesting new principle of a magnetic field-effect transistor. The power losses in such a device are minimized by using superconducting lines for the generation of the magnetic control field and for the interconnections. For such a hybrid concept, implementing semiconducting and superconducting components, the important performance characteristics are evaluated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337225
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  • 5
    Electronic Resource
    Electronic Resource
    Large electric field effects in YBa2Cu3O7−δ films containing weak links (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 630-632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of applied electric fields on the transport properties of weak links in YBa2Cu3O7−δ films has been investigated. It is found that the critical temperature Tc0 of epitaxial films containing weak links can be reduced by 10 K with applied electric fields of 6 MV/cm. In one case, Tc0 shifts of up to 25–30 K were observed. These are by far the largest Tc shifts reported for any superconducting system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108877
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  • 6
    Electronic Resource
    Electronic Resource
    a/c YBa2Cu3O7 boundaries: Preferential sites for the nucleation of epitaxial Y2O3 precipitates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 720-722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y2O3 precipitates with typical sizes between 70 and 300 nm2 have been identified by high-resolution electron microscopy and image calculations in mixed a- and c-axis oriented YBa2Cu3O7 sputtered films. The precipitates are densely distributed (1015 cm−3), have tabular shape and grow epitaxially at boundaries between a- and c-axis oriented grains, with the (001) Y2O3 plane parallel to the a,b plane of the a-axis oriented grain and the (110) Y2O3 plane parallel to the a,b plane of the c-axis oriented grain. Their largest interfacial facet lies parallel to the a,b plane of the a-axis oriented regions. Lattice-matching arguments show that energetically this situation is the most favorable one, which explains the nucleation of precipitates at a/c boundaries.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107803
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  • 7
    Electronic Resource
    Electronic Resource
    Sr2RuO4: A metallic substrate for the epitaxial growth of YBa2Cu3O7−δ (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1138-1140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystals of Sr2RuO4 were grown by the floating zone melting technique. The crystals have the K2NiF4 structure and display a metallic resistivity behavior in the a-b-plane between 300 and 4.2 K (ρab(approximately-equal-to)10−4 Ω cm at 300 K). The in-plane lattice mismatch between YBa2Cu3O7−δ (001) and Sr2RuO4 (001) is smaller than 1.3%, better than that to SrTiO3 {100}. Epitaxial films of YBa2Cu3O7−δ with Tc(R=0) as high as 86 K have been grown on Sr2RuO4 crystals. The epitaxial growth of YBa2Cu3O7−δ on Sr2RuO4 was revealed by four-circle x-ray diffraction as well as by transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106432
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  • 8
    Electronic Resource
    Electronic Resource
    Surface outgrowths on sputtered YBa2Cu3O7−x films: A combined atomic force microscopy and transmission electron microscopy study (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 553-555 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have structurally and morphologically characterized the surface of sputtered YBa2Cu3O7−x films on (001) SrTiO3 using atomic force microscopy and transmission electron microscopy. Atomic force microscopy reveals three types of outgrowths with different shapes and heights between 2 and 200 nm: type I exhibits cubic habit, type II tabular habit, and type III is an agglomerate of no particular shape. Some of the type-III outgrowths are located at the center of growth spirals where the screw dislocation intersects the film surface, suggesting that in YBa2Cu3O7−x films these defects promote the occurrence of one another. Using high-resolution electron microscopy and electron diffraction the surface outgrowths have been identified as follows: type I is Y2O3, type II Y2O3 and CuYO2, and type III YBa2Cu3O7−x, CuO, and Y2O3. In contrast to types-I and -II outgrowths which are both epitaxially related to the surrounding YBa2Cu3O7−x, the large type-III agglomerates consist of epitaxial and nonepitaxial grains. As it is found that the outgrowing nonepitaxial phases emanate from screw dislocations and from a,b-axis domain boundaries, it is suggested that both internal stresses and high interfacial energies promote such outgrowths on YBa2Cu3O7−x films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110002
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  • 9
    Electronic Resource
    Electronic Resource
    Identification of epitaxial Y2O3 inclusions in sputtered YBa2Cu3O7 films: Impact on film growth (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1016-1018 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y2O3 inclusions with typical sizes between 100 and 300 nm3, densely distributed (1016 cm−3) in sputtered YBa2Cu3O7 (YBCO) films on SrTiO3 substrates, have been identified by high-resolution electron microscopy. The precipitates exhibit either cuboid or needlelike shapes and grow epitaxially within and on top of YBCO. The dominant orientation relationship corresponds to a situation where the two-dimensional lattices are nearly coincident in the interfacial (001) plane. These precipitates may contribute to the generation of screw and edge dislocations. In addition, they provide a large number of potential pinning sites for magnetic flux lines, which may contribute to the observed high critical current densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106507
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  • 10
    Electronic Resource
    Electronic Resource
    Electric field controllable Josephson junctions of high quality in high-Tc superconductors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3031-3033 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-terminal Josephson junctions, the third terminal of which can be used to control the electronic properties of the device, are the key to a number of exciting device applications of high-Tc superconductors. To this end a novel device structure has been developed, which consists of an inverted metal-insulator-superconductor field-effect transistor into which a bicrystal grain boundary junction is embedded. These devices are excellent Josephson junctions as exemplified by their current–voltage characteristics and the magnetic field dependencies of the critical currents. The critical current of the junctions can be changed by 8% per volt applied to the gate electrode, the gate currents being negligible. Because they are sensitive to electric as well as magnetic fields, the junctions can be controlled by two independent inputs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115567
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