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  • Articles: DFG German National Licenses  (22)
Source
  • Articles: DFG German National Licenses  (22)
Material
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6039-6048 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed characterization of the optical, microstructural, and electrical properties of thin (5–50 nm) Al films grown by thermal evaporation, magnetron sputtering, and ion-assisted sputtering (IAS), is reported. Dielectric-function measurements were carried out by using grating coupling to surface plasma waves (SPW) and, for comparison, ellipsometric measurements were also performed. Scanning electron microscope (SEM) studies of film microstructure as well as dc electrical resistivity measurements were carried out and correlated with the optical data. Using the Bruggeman effective media approximation, good agreement was obtained for thicker films (30–50 nm), but not for thinner films (〈30 nm). SEM and resistivity measurements suggest that conditions of film growth influence the behavior of individual grains, resulting in increased electron reflectance at the grain boundaries with increasing energy delivered to the substrate during deposition. This resulted in lower electrical resistivities for evaporated films than for IAS films. Finally, the influence of 5–20 A(ring) Al2O3 on thick Al films was investigated: Both SPW and resistivity measurements suggest that the oxide film was not confined to film surface, but had penetrated inside the film leading to much higher electrical resistivities than would be otherwise expected.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 474-479 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two coupled nonlinear equations for a perturbed electromagnetic field in an electron-positron-ion plasma with shear flow, embedded in a nonuniform magnetic field, are derived and solved analytically. The nonlinear solutions of these equations are found in the form of tripolar vortices. The linear instability condition is also discussed. It is found that the presence of ions can play a significant role in nonlinear dynamics, even if the density of ions is of the order of 10−3 as compared to the densities of the lighter species. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 368-369 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ambiguity in using the quasineutrality approximation to describe the low-frequency plasma perturbations in nonuniform magnetized plasmas is pointed out. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 1 (1994), S. 3505-3507 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the equations governing the dynamics of weakly interacting medium-frequency electrostatic waves in a nonuniform magnetoplasma with a fixed ion background can have localized vortex chain solutions.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 3522-3522 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is asserted that the Comment of Shukla et al. [Phys. Plasmas 8, 3519 (2001)] does not focus on errors or mistakes in the original paper. It reproduces several results already quoted in the literature. Some of these results are not consistent. In the original paper only a procedural flaw in the previous investigations was pointed out just for the sake of clarity. It does not point out any big change in the results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 9 (2002), S. 724-726 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that ion streaming and the direction of propagation of the nonlinear structure are the factors which can determine the amplitude of the density hump in fully nonlinear ion-acoustic solitary waves. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1169-1170 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that the thermoelectric term which appears as a source of fluctuating magnetic field B1 in unmagnetized nonuniform plasmas in the limit ωpe(very-much-less-than)ω(very-much-less-than)ωpe [where ωpi(ωpe) are ion (electron) plasma oscillation frequencies, respectively] is of smaller order. Therefore, the thermoelectric term does not seem to contribute to magnetic fluctuations linearly. The theory of magnetic field generation based on ion dynamics predicts the same order of magnitude of B1 which is experimentally observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6997-7008 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a detailed study of nanostructure fabrication and optical characterization of sub-μm-period, one-dimensional, Si grating structures. Nanoscale wall width structures were fabricated by combining laser interferometric lithography with anisotropic wet-chemical etching (KOH) and thermal oxidation. Structure wall widths were characterized by Raman scattering (RS) and scanning electron microscopy. Salient features of the RS measurements as a function of wall widths from ∼100 to 10 nm were: (a) large cross-section enhancements, ∼100×, for linewidths ∼50 nm; (b) asymmetric line shapes with tails extending to smaller Raman shifts for linewidths ∼20 nm; and (c) splitting of the bulk Raman mode, again to lower Raman shifts, for linewidths ∼10 nm. For room temperature photoluminescence (PL) measurements, the grating structures were excited at 257 nm. PL measurements are reported for oxidized and unoxidized grating structures with peaks varying between 380 and 700 nm. PL was only observed for Si structures with dimensions less than about 10 nm. PL intensities and spectral line shapes varied significantly as a result of surface modification treatments such as high temperature anneal in a N2 atmosphere, immersion in boiling H2O, and long-term exposure to ambient air. The measurements indicate a strong correlation of the visible PL with crystal size (∼5–10 nm); however, it remains unclear if the mechanism responsible is quantum confinement, passivation of the surface by Si:Hx complexes, or optically active surface states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 905-907 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple technique for fabricating large fields of uniform nm scale Si structures is reported. This technique makes use of the highly anisotropic etching rates of KOH:H2O solution (40 wt. %) in Si (400:200:1=〈110〉:〈100〉:〈111〉). A large field of uniform sub-μm thick walls, along the 〈112〉 direction, is generated on a (110) Si sample coated with Si3N4 and photoresist films, by standard interferometric lithography techniques. The developed photoresist grating pattern is transferred into the Si3N4 layer by isotropic CF4 plasma etching. Finally, the nitride layer serves as an etch mask for the anisotropic chemical etch. Arrays of Si walls with pitch of 0.34 μm, sharp (110)–{111} corners, depths of 2.0 μm, and wall widths below SEM resolution limits are reported. The Raman scattering spectra of these structures shows shifted, asymmetrical line shapes; simple model calculations based on size-effect-induced relaxation of the usual Δk=0 momentum selection rule provide estimated wallwidths≤10 nm.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 4 (1992), S. 86-90 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that free energy stored in the equilibrium electron density and temperature gradients can drive short-wavelength electromagnetic fluctuations in collisional plasmas embedded in a homogeneous magnetic field. The enhanced electromagnetic fluctuations can cause anomalous cross-field electron energy transport. The present investigation can have relevance to short scale electric and magnetic field fluctuations, as well as anomalous thermal conduction in tokamak edges.
    Type of Medium: Electronic Resource
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