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  • Articles: DFG German National Licenses  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1714-1716 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous hydrogenated silicon-germanium alloys have been studied using a variety of junction-capacitance techniques to establish the dependence of the mobility gap electronic structure and the density of deep defects on the germanium content. The Urbach tail slope is observed to be nearly constant over the whole alloy range. The energy position of the dominant deep defect band near midgap is deduced and evidence for a shallower unoccupied defect band undergoing a large lattice relaxation is also observed. The total density of deep defects is found to increase exponentially with increasing germanium content and the details of this increase are shown to be consistent with a weak bond to dangling bond conversion model.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 723-725 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of carbon impurities in a-Si:H samples at low concentrations (1 at. % to less than 0.1 at. %) has been investigated using capacitance profiling methods on samples whose carbon content was intentionally modulated spatially during growth. We have found a strong correlation between the secondary-ion mass spectroscopy determined carbon content and the susceptibility of these samples to light-induced metastable defect creation. No correlation was found with respect to the variation in total hydrogen content of these samples.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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