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  • Articles: DFG German National Licenses  (47)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 62 (1970), S. 30-51 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1881-1887 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the electrical and optical characteristics of beryllium implanted Mg-doped GaN materials. The Mg-doped GaN samples were grown by metalorganic chemical vapor deposition system and implanted with Be ions at two different energies of 50 and 150 keV and two different doses of about 1013 and 1014 cm−2. The implanted samples were subsequently rapidly thermal annealed at 900, 1000, and 1100 °C for various periods. The annealed samples showed an increase of hole concentration by three orders of magnitude from nonimplanted value of 5.5×1016 to 8.1×1019 cm−3 as obtained by Hall measurement. The high hole concentration samples also showed low specific resistance ohmic contact of about 10−3 Ω cm2 and 10−6 Ω cm2 using Ni/Au and Ni/Pd/Au metallization, respectively, without any further annealing process. It is also found from the temperature dependent photoluminescence that the activation energy of Mg dopants of the Be implanted samples has an estimated value of about 170 meV, which is nearly 30% lower than the as-grown samples of about 250 meV. The crystal quality and surface morphology of the Be implanted samples measured by x-ray diffraction and atomic force microscopy show no obvious degradation in the crystal quality and surface morphology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1780-1782 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature continuous-wave (cw) lasing operation with a threshold current (Ith) of 3 mA and a pulsed Ith as low as 1.5 mA were achieved in mushroom structure surface- emitting lasers utilizing a 300 A(ring) GaAs single quantum well as an active layer and an AlAs/Al0.1Ga0.9As multilayer as the top and the bottom distributed Bragg reflectors. A series resistance of 250 Ω was obtained on devices with an 8×8 μm2 active region using selective zinc diffusion. A differential quantum efficiency of 12%–20% and a maximum cw light output power exceeding 1 mW were achieved. The emission wavelength was 860 nm with a spectral linewidth of ∼0.5 A(ring).
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1147-1149 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modulation bandwidth approaching 5 GHz in a GaAs quantum well vertical cavity surface emitting laser with a mushroom mesa structure is reported. The modulation speed and the maximum power of 1.5 mW were limited by device heating. The second harmonic distortion as a function of frequency was measured at an injection current twice threshold and an optical modulation index of 10%, and a peak distortion of about −25 dBc was obtained.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 4193-4209 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Diffusion coefficients for thermally activated and tunneling diffusion as well as mean square fluctuation data are presented for 1H, 2H, and 3H on W(110), as functions of coverage θ and temperature. If D is written as D0 e−E/kT for thermally activated diffusion, there are only small isotope effects, consistent with zero point energy differences for E, which increases slightly with coverage. There are dramatic isotope effects in D0, which can be approximated by ke−cM−1/2 at low θ, k and c being constants. It is suggested that this behavior results from the large vibron spacings relative to phonon energies, and that adsorbate induced changes in the surface phonon spectrum of W(110) are responsible for the changes in D0 with θ which are also very substantial. For tunneling diffusion isotope effects are remarkably small. This is rationalized in terms of additive mass corrections resulting from adsorbate–substrate interactions, which make the effective masses of the three isotopes very nearly the same. The variation in Dtunneling with θ is explained in terms of increasing barrier heights and slight decreases in effective mass as θ increases. Differences in the behavior of 1H and 3H on the one hand and 2H on the other in the tunneling regime at θ〉0.6 are tentatively explained in terms of the statistics of the isotopes. The effect of oxygen on tunneling diffusion is also presented and discussed. Mean square fluctuations, proportional to the two-dimensional compressibility of the adlayer show isotope effects, decreasing monotonically with increasing mass. Mixtures were also examined. In the activated regime D0 varies very strongly with composition at total constant θ=0.9, going through minima when the mole fraction of the lighter isotope in each binary mixture is ∼75%. Evidence for phase segregations in the mixtures is also presented: Diffusion and fluctuation results for mixtures are most easily interpreted by assuming complete miscibility of any two isotopes above 133 and below 90 K but segregation into two phases between these temperatures, the two phases coming closest to being pure at 115–118 K.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 4071-4074 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The distribution of condensing metal atoms over the two types of sites present on an atomically smooth Ir(111) has been measured in a field ion microscope. For Ir, Re, W, and Pd from a thermal source, condensing on Ir(111) at ≈20 K, the atoms are randomly distributed, as expected if they condense at the first site struck.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5087-5096 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Measurements with the field ion microscope have been made of the distribution function governing the displacements of a single metal atom diffusing on W(211). It is shown that by comparing such measurements with the predictions of random walk models, the contributions of jumps of different lengths to the overall diffusion can be ascertained, even if diffusion is dominated by transitions between adjacent sites. Extensive observations for rhenium, as well as for molybdenum atoms on W(211) are best represented by a symmetric random walk between nearest-neighbor sites, without any contribution from longer jumps. For iridium and rhodium atoms, however, double jumps do appear to participate in the diffusion, but amount to only ≈3% of the total.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 6535-6536 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Diffusivities have for the first time been quantitatively measured for two-dimensional clusters of iridium atoms on a metal surface, Ir(111). As cluster size increases from two to seven atoms, the diffusivity generally diminishes, but tetramers are an exception. It is shown that their high mobility comes about because of weak interatomic binding, and a low activation energy for diffusion, rather than from a change in the mechanism of motion, which involves displacements of individual adatoms independent of cluster size.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2686-2688 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-longitudinal-mode oscillation has been observed for the gain-guided GaAlAs laser arrays under controlled conditions. These multiple-element laser arrays were operated under continuous-wave conditions with controllable temperatures and currents. We have observed single-longitudinal-mode operation at near threshold and above threshold for operating temperatures of 10–37 °C. A mode intensity ratio of over 50:1 was observed with fairly stable output. In addition, a single-lobed far-field pattern under single-mode oscillation was also observed.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1839-1840 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a GaAs mushroom structure surface-emitting laser at 900 nm with submilliampere (0.2–0.5 mA) threshold under room-temperature cw operation for the first time. The very low threshold current was achieved on devices which consisted of a 2–4 μm diameter active region formed by chemical selective etching, and sandwiched between two Al0.05Ga0.95 As/ Al0.53Ga0.47 As distributed Bragg reflectors of very high reflectivity (98–99%) grown by metalorganic chemical vapor deposition.
    Type of Medium: Electronic Resource
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