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  • Electronic Resource  (21)
  • 1990-1994  (21)
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  • Electronic Resource  (21)
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  • 1
    Electronic Resource
    Electronic Resource
    Dependence of lasing characteristics of quantum well lasers on substrate orientation: Tight-binding theory (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 881-883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-structure analysis using the tight-binding method indicates that there is a significant dependence of lasing properties of GaAs/AlGaAs quantum well lasers on substrate orientation, which suggests the importance of choosing the substrate orientation carefully for improving lasing properties. These results are mainly due to changes in the in-plane effective mass of the heavy hole.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104466
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Enhanced and inhibited spontaneous emission in GaAs/AlGaAs vertical microcavity lasers with two kinds of quantum wells (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2339-2341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate enhanced and inhibited spontaneous emission effects in a vertical λ-microcavity structure having two kinds of quantum wells (QWs) with the thicknesses of 76 and 114 A(ring), measuring both photoluminescence intensity and carrier lifetime. The 76 and 114 A(ring) QWs are placed at the maximum and at the nodes of the emitted standing wave in the microcavity, respectively. When the λ-microcavity mode is tuned to the quantized band-gap energy of the 76 A(ring) QWs (enhanced condition), the PL intensity is enhanced compared with the case that the cavity mode is tuned to the quantized band-gap energy of the 114 A(ring) QWs (inhibited condition). In addition, the increase of the carrier lifetime is also observed under the inhibited condition. These results demonstrate existence of enhanced and inhibited spontaneous emission effects in the microcavity structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104918
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Wavelength switching of picosecond pulse (〈10 ps) in a quantum well laser and its all-optical logic gating operations (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We developed a novel technique to switch the lasing wavelength of picosecond pulses in an optically pumped quantum well laser by utilizing spatially localized and homogeneous excitation. The applications of these phenomena to ultrafast logic gating operations are successfully demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105116
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Picosecond dynamics in gain-switched uncoupled and coupled quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We experimentally demonstrate the importance of two-dimensional carrier confinement for picosecond dynamics in gain-switched quantum well lasers, measuring time-resolved spectra of gain-switched quantum well (QW) lasers with coupled QWs and uncoupled QWs. The result indicates that an extremely short pulse (〈2 ps) is generated in the uncoupled QW lasers. On the other hand, the pulse duration is about 10 ps in the coupled QW lasers in which the two-dimensional confinement effect is significantly reduced owing to the miniband formation. These results demonstrate the importance of the two-dimensional confinement of carriers for the short pulse generation in the semiconductor lasers. The measured dynamic spectral shift of the gain-switched QW lasers also confirm the significant role of the two-dimensional carrier confinement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105011
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of GaAs quantum wires on epitaxially grown V grooves by metal-organic chemical-vapor deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 533-535 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful fabrication of thin GaAs quantum wires (120–200 A(ring))×(200–300 A(ring)) by a novel metal-organic chemical-vapor-deposition growth technique is reported. The GaAs quantum wires were grown on a V groove formed by two GaAs triangular prisms which were selectively grown on SiO2 masked substrates. The V groove has a very sharp corner at the bottom, which results in reduction of the effective width of the quantum wire structures. The measurement of photoluminescence and photoluminescence excitation spectra with polarization dependence indicate the existence of the quantized state in the quantum wires.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350695
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  • 6
    Electronic Resource
    Electronic Resource
    In situ patterning of contamination resists in metalorganic chemical vapor deposition for fabrication of quantum wires (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2372-2374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrated a novel selective growth technology for the fabrication of quantum microstructures utilizing in situ patterning of contamination resist in the metalorganic chemical vapor deposition system. The results indicate that a GaAs quasi-quantum wire structure, as narrow as 700 nm, can be successfully fabricated, showing that this technique may be applied to fabrication technologies for quantum microstructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104874
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Picosecond spectral dynamics of gain-switched quantum-well lasers and its dependence on quantum-well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2675-2677 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved spectra of gain-switched GaAs/AlGaAs quantum-well (QW) lasers are measured by a streak camera with a monochromator to investigate effects of QW structures on picosecond lasing dynamics. The result shows that both pulse forms and spectral dynamics strongly depend on the number of the QWs: The pulse duration and spectral width are both broadened when the number of QWs is smaller. This dependence mainly results from the difference in the gain profile at the initial stage of the pulse formation due to the difference in the carrier concentration per well (cm−2). In addition, the overflow effect of carriers outside of QWs also plays a significant role when the number of QWs is smaller. Theoretical discussions considering dynamic behavior of the gain and the capturing effect of carriers into QWs explain the experimental results well.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345483
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  • 8
    Electronic Resource
    Electronic Resource
    Differential gain of GaAs/AlGaAs quantum well and modulation-doped quantum well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 4-6 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The differential gain which is an important parameter for modulation dynamics in semiconductor lasers is evaluated experimentally by measuring the gain coefficient and the carrier lifetime in GaAs/AlGaAs double-heterostructure (DH) lasers, quantum well (QW) lasers, and p-modulation-doped quantum well (p-MDQW) lasers. The results indicate that the differential gain of the QW laser is 2.4 times as high as that of the DH laser, which is consistent with the theory. In addition, it is found that improvement of the differential gain using the p-MDQW structure is not so large as that expected by the theory. This result suggests that enhanced energy broadening due to the reduction of the equivalent dephasing time τeqin, which includes both the dephasing time τin due to the intraband relaxation and the band tailing effects, significantly affects the gain spectra in the p-MDQW lasers, which is confirmed by the measurement of the spontaneous emission spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104440
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Tight-binding analysis of the conduction-band structure in quantum wires (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1224-1226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tight-binding method is applied, for the first time, to the analysis of the conduction-band structure of GaAs-Al0.4Ga0.6As quantum wires which are parallel to the [110] orientation. The results indicate that the effective mass of electrons parallel to the quantum wires is about 1.45 times as large as that of bulk GaAs. This increased effective mass reduces the electron mobility of the quantum wire at low temperature compared to the value which has been expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103491
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  • 10
    Electronic Resource
    Electronic Resource
    Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1421-1423 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct deposition of strained InGaAs-dot structures with a diameter of about 15 nm on GaAs surfaces by metalorganic chemical vapor deposition growth. High resolution scanning electron micrographs show highly uniform quantum-sized dots formed by the Stranski–Krastanow growth mode. The sharp photoluminescence emission band of buried dot structures indicates efficient carrier capture and a homogeneous heterointerface. The average dot size and area dot density can be controlled accurately by growth temperature, and InGaAs deposition thickness, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112070
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