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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of Cd1−xMnxTe epilayers grown by liquid-phase epitaxy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1023-1028 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epilayers of Cd1−xMnxTe grown on CdTe substrates by liquid-phase epitaxy (LPE) are characterized by x-ray, modulated (piezo- or photo-) reflectivity, and Raman spectroscopy. The epilayers are found to be of excellent structural quality, having sharp excitonic signatures in the reflectivity spectra and highly uniform Mn concentrations. Intentional introduction of In donors during LPE growth of Cd1−xMnxTe has been verified by spin-flip Raman signals which show large Raman shifts with a Brillouin function behavior characteristic of donors in diluted magnetic semiconductors. During the LPE growth we also encountered the formation of large-area, free-standing platelets of Cd1−xMnxTe. They have been similarly characterized with x-rays, as well as modulation and Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346739
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  • 2
    Electronic Resource
    Electronic Resource
    Synthesis and properties of high-Tc YBa2Cu3O7−y oriented thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3493-3497 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The a- and c-axis-oriented YBa2Cu3O7−y thin films were prepared by rf magnetron sputtering technique. The characterization of the thin films was carried out by inductively coupled plasma atomic emission spectroscopy, x-ray diffraction, and scanning Auger profile techniques. The Tc, Tc(H), Jc(H), and Hc2 -T(near Tc) were measured by the standard dc four-probe method. It was found that very strong anisotropy of this material was manifested in its superconducting properties, especially for c-axis-oriented thin films. It was also found that Jc depends very strongly upon stoichiometric composition 123, preferential orientation of the film, and the characteristic of the film-substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346360
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  • 3
    Electronic Resource
    Electronic Resource
    Heteroepitaxial multilayer of YBa2Cu3O7 and PrBa2Cu3O7 on SrTiO3 and LaAlO3 substrates by sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2072-2074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully fabricated epitaxially grown YBa2Cu3O7/PrBa2Cu3O7 (YBCO/PBCO) multilayer thin films on SrTiO3 and LaAlO3 substrates by dc/rf magnetron sputtering. The thicknesses of YBCO and PBCO varied from 1 to 8 unit cells. Satellite peaks in x-ray diffraction patterns clearly indicate the formation of periodic modulation structures of different wavelengths. At a certain thickness of the YBCO layer, the zero resistance transition temperature Tc0 decreased with the increase of the PBCO layer thickness. In contrast, Tc0 increased with the increase of the YBCO layer thickness at a constant PBCO layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351640
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  • 4
    Electronic Resource
    Electronic Resource
    Thermally activated dissipation and critical field Hc2 in c-oriented high-Tc Bi-Pb-Sr-Ca-Cu-O thin film (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4379-4383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of resistivity-temperature (R-T) curves measured under various applied fields in a high-Tc Bi-Pb-Sr-Ca-Cu-O thin film which has a zero-resistance temperature Tc0 of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux-creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation-dependent activation energy U0(H,aitch-theta). The U0(H,aitch-theta) has a very high value of 381.6 meV under a field of 0.1 T parallel to the c axis. The upper critical field Hc2 determined from these R-T curves shows high values and the effect of flux creep to the Hc2(0) is examined by the irreversible behavior with the "giant'' flux-creep model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348362
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  • 5
    Electronic Resource
    Electronic Resource
    Critical current and flux pinning near Tc of a YBa2Cu3O7 thin film (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2461-2463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The voltage V versus current I of a high-quality YBa2Cu3O7−x thin film with zero-resistance temperature equal to 90.8 K was measured at temperatures near Tc (85, 87, and 90 K, respectively) under different magnetic fields (0–7 T). A significant result is that the critical-current density of the film reached 1.37×104 A/cm2 (zero field) even at 90 K, implying that strong pinning centers exist in our sample. However, a small applied magnetic field will diminish the critical-current densities remarkably. The pinning-force densities are found to follow Kramer's scaling law in both perpendicular and parallel directions of the magnetic fields to the c axis of the film. A possible influence of thermally activated flux creep on the pinning mechanism is confirmed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349400
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  • 6
    Electronic Resource
    Electronic Resource
    The evidence for interaction of the N-N pair with oxygen in Czochralski silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3775-3777 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Evidence for interaction between the N-N pair and interstitial O in N-doped Czochralski silicon has been presented by studying the annealing behavior of the corresponding IR absorption bands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348476
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  • 7
    Electronic Resource
    Electronic Resource
    Critical current measurements in YBa2Cu3O7−x thin film grown on LaAlO3 substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 884-886 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical current density Jc(B,T) of epitaxial YBa2Cu3O7−x (YBCO) thin films on LaAlO3 was measured under different applied magnetic fields (0–7 T) with the temperature ranging from 65 to 79 K. At 65 K, the zero-field critical current density of the best film was 5.8×106 A/cm2; even at magnetic fields up to 7 T, Jc could reach as high as 1×106 A/cm2. Strong anisotropy was observed at 79 K. The anisotropy behavior diminished with the decrease of temperature. Experimental results showed that Jc was proportional to (Tc−T)3/2 ; this was in accordance with the theoretical explanation by the Josephson junction model for granular superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346784
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  • 8
    Electronic Resource
    Electronic Resource
    The A 1Σ+u state of the potassium dimer (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 43-50 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using resolved fluorescence from a 1Σ+g Rydberg state to the A 1Σ+u state of K2, we have observed the lowest vibrational levels (v'≤12) of the A 1Σ+u state. Levels v'=21 to 62 (well beyond the previously known v'=12 to 18 region) were observed using the polarization optical–optical double resonance technique. Molecular constants and a Rydberg–Klein–Rees (RKR) potential energy curve based on these constants are given. Franck–Condon factors for the K2, A 1∑+u–X 1∑+g system based on this new A 1Σ+u potential are also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.458447
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  • 9
    Electronic Resource
    Electronic Resource
    Perturbation-facilitated all-optical triple resonance spectroscopy of the Na2 b 3Πu state (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 7211-7219 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Na2 b 3Πu state has been studied by the continuous wave (cw) all-optical triple resonance (AOTR) technique. The AOTR technique used here corresponds to a perturbation-facilitated optical–optical double resonance (PFOODR) excitation through A 1Σu+∼b 3Πu mixed intermediate levels from the ground state to the 2 3Πg state and stimulated emission pumping (SEP) of the 2 3Πg→b 3Πu transition. This sub-Doppler high-resolution PFOODR-SEP technique has allowed us to reach many b 3Πu levels (Ω=0, 1, 2, perturbed and unperturbed, including low v below the A 1Σu+ potential minimum and higher vibrational levels up to v=57). Based on these new high resolution data and previous results from high resolution spectroscopy, we have determined a new set of deperturbed molecular constants from the b 3Πu state up to v=57, the corresponding RKR potential energy curve and the A 1Σu+∼b 3Πu spin–orbit interaction constants. This represents an example of a powerful and general technique for observing a "dark'' (e.g., triplet) perturbing state when only the "bright'' (e.g., singlet) perturbed state is well known from single photon spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463546
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  • 10
    Electronic Resource
    Electronic Resource
    Observation of the 39K2 a 3Σ+u state by perturbation facilitated optical–optical double resonance resolved fluorescence spectroscopy (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8452-8463 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rydberg states of the potassium dimer in the 28 430–29 080 cm−1 and 30 030–30 500 cm−1 regions above the ground state X1Σ+g minimum have been studied using the perturbation facilitated optical–optical double resonance technique (PFOODR). Energy levels in these energy regions have been assigned to both triplet and singlet gerade states based on excitation pattern information as well as intensity considerations. Resolved fluorescence from a mixed triplet–singlet 43Πg ∼1Πg upper state to the ground triplet state a 3Σ+u has been used to construct a potential energy curve for the a 3Σ+u state which is in excellent agreement with recent theoretical results. Since this electronic state and the ground singlet state X1Σ+g share the same dissociation limit, we have determined the dissociation energy for the potassium dimer to be De=4450±2 cm−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459283
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