ISSN:
1432-0630
Schlagwort(e):
Semiconductor lasers
;
Heterojunction theory
;
I–V characteristics
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract It is shown that carrier degeneracy plays an important role in determining the electrical properties of double heterostructure injection lasers. Correct statistical treatment of the charge cariers in the device leads to a generalised Einstein relation between the carrier transport coefficients. Such a relation (for both electrons and holes) is used in numerical solutions of semiconductor transport equations applicable to the laser. Experimentally observed I–V characteristics of the laser are explained in terms of carrier degeneracy effects.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00903953
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