ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A constitutive modeling approach, called the disturbed state concept (DSC), is developed to characterize the mechanical response of silicon with dislocations and oxygen impurity. Factors such as dislocation density, temperature, strain rate, and oxygen concentration are included in the model. The parameters for a silicon crystal are calibrated based on stress–strain data reported by Dillon et al. [J. Appl. Phys. 60, 1784 (1986)] and those for silicon with oxygen impurity based on laboratory stress–strain data reported by Yonenaga et al. [J. Appl. Phys. 56, 2346 (1984)]. The predictions from the DSC model are compared with those based on the model proposed by Dillon et al. [J. Appl. Phys. 60, 1784 (1986)], and with laboratory test data by Yonenaga et al. [J. Appl. Phys. 56, 2346 (1984)]. The correlation between the DSC predictions and test data is very good. It is believed that the DSC can provide a unified and improved constitutive model, compared to previously available models, for the thermomechanical behavior of silicon and other materials. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.368893
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