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  • Electronic Resource  (20)
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  • Electronic Resource  (20)
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  • 1
    Electronic Resource
    Electronic Resource
    Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3840-3843 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonequilibrium electron distributions and phonons in CdTe have been studied by transient picosecond/subpicosecond Raman spectroscopy at T=300 K. Our experimental results show that for photoexcited electron–hole density of n(approximately-equal-to)1018 cm−3, the electron distributions can be reasonably well described by Fermi–Dirac distribution functions with effective electron temperature substantially higher than the lattice temperature. From an ensemble Monte Carlo analysis of the nonequilibrium phonon population as a function of photoexcited electron–hole pair density, the LO phonon lifetime in CdTe has been deduced to be τ(approximately-equal-to)0.75±0.25 ps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363338
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  • 2
    Electronic Resource
    Electronic Resource
    Electron-hole interaction and high-field transport of photoexcited electrons in GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5330-5336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a theoretical ensemble Monte Carlo method to study the response of carriers photoexcited by a 1.55-eV laser pulse to applied electric fields (less than 5 kV/cm) for excited carrier densities between 1017 cm−3 and 1018 cm−3. It is found that the electron-hole interaction reduces the fraction of electrons that transfer to the upper valleys and reduces the velocity of the electrons. These effects are more significant at low electric fields and higher excitation levels. The energy of the holes rises initially due to the energy transfer from the hot electrons through the electron-hole interaction. This is also reflected in a higher velocity for the holes during the first picosecond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338269
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  • 3
    Electronic Resource
    Electronic Resource
    Monte Carlo study of minority electronic transport in InGaAs: Effects of phonon mode splitting and dynamically screened electron-hole interactions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4322-4324 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an ensemble Monte Carlo simulation of electronic transport in p-type In0.53Ga0.47As. The effects of mixed phonon modes and of dynamically screened electron-hole scattering on the velocity-field characteristics are examined. Our results show that a two phonon model yields smaller velocities at low fields and higher values beyond the intervalley transfer threshold. The dynamic screening leads to a field dependent velocity enhancement at moderate carrier densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347164
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  • 4
    Electronic Resource
    Electronic Resource
    Tunneling spectroscopy of a quantum resonator (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 5001-5003 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A tunneling current across a thin wall of a narrow-wide-narrow (NWN) cavity region in an electron waveguide is calculated. A lead is attached to the cavity region at right angle through a thin tunneling barrier to drain the current. The transmission coefficient through the NWN waveguide shows successive dips due to resonances through quasibound states in the cavity region as the length of the cavity region or the Fermi energy of an incident electron is varied. The transmission coefficient leaking out the tunneling barrier shows peaks that line up with the dips in the forward transmission probability, demonstrating that a tunneling spectroscopy of the quasibound state levels is provided through sweeping the Fermi energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352026
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  • 5
    Electronic Resource
    Electronic Resource
    Quantum molecular dynamics treatment for the electronic relaxation of high-density plasmas in two-dimensional structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2369-2371 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine effects of the exchange interaction on the thermalization dynamics of high-density photogenerated plasmas in quantum wells. A technique for simulating the transient dynamics is presented which combines the conventional Ensemble Monte Carlo method for the carrier-phonon scattering, with a molecular dynamics scheme for treating the many-body contributions to the long-range Coulomb potentials. Account is taken of the exchange-energy interactions in keeping with the exclusion principle and the Fermi nature of the system. Our results indicate that the exchange corrections slow the cooling of the photogenerated plasma at carrier densities above 1012 cm−2. The effect is due primarily to a weakening of the direct Colomb force, and demonstrates that calculations based on simple carrier–carrier scattering alone would underestimate thermalization time constants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105233
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetically switched quantum waveguide qubit (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2214-2215 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, quantum computing has gained notoriety as a computational method that has the possibility to greatly increase the speed of calculations compared with traditional, binary computing. To this end, simulations of a quantum controlled-not gate implemented by a quantum waveguide are examined. The waveguide is composed of two quantum wires and a tuned coupling region and the simulations consist of a solution to Schrödinger's equation via the Usuki method of mode matching. The use of Gaussian wave packets in previous work on this topic is questioned and various methods of tuning the coupling region in order to guide the quantum wave are investigated. Simulations are shown for a tuned waveguide in which the wave can be switched by the application of an external magnetic field. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405428
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  • 7
    Electronic Resource
    Electronic Resource
    The persistence of eigenstates in open quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 129-131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that transport in open quantum dots can be mediated by single eigenstates, even when the dot leads support several propagating modes. The broadening of these few robust states, whose wave functions are generally localized within the interior of the dot, is found to be virtually independent of the lead width. Our results therefore indicate that a proper discussion of the specific nature of the individual eigenstates of the closed system is critical to determining their influence on transport through open dots. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490404
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum waveguide array generator for performing Fourier transforms: Alternate route to quantum computing (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2823-2825 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, quantum computing has gained attention as a possible means of greatly increasing the speed of certain calculations when compared with traditional, binary computing. A key part of many quantum computing algorithms is the performance of a Fourier transform. In this letter, we propose a quantum waveguide array device that can perform such operations quickly with a parallel approach that uses the analog properties of waves and rather than the qubit concept. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413500
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  • 9
    Electronic Resource
    Electronic Resource
    Spectroscopy of a silicon quantum dot (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1576-1578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a silicon quantum dot embedded in a metal–oxide–semiconductor field-effect transistor structure. Two side gates deplete the quasi-two-dimensional electron gas created by a top inversion gate. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, the conductance peaks reveal the details of the energy-level structure within the dot and their interactions with one another. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123621
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  • 10
    Electronic Resource
    Electronic Resource
    Transient subpicosecond Raman studies of electron velocity overshoot in an InP p-i-n nanostructure semiconductor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3575-3577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient electron transport in an InP p-i-n nanostructure semiconductor has been studied by subpicosecond Raman spectroscopy at T=300 K. Both the nonequilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117211
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