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  • 1
    Electronic Resource
    Electronic Resource
    Stress-related problems in silicon technology (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 53 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The silicon integrated-circuits chip is built by contiguously embedding, butting, and overlaying structural elements of a large variety of materials of different elastic and thermal properties. Stress develops in the thermal cycling of the chip. Furthermore, many structural elements such as CVD (chemical vapor deposition) silicon nitride, silicon dioxide, polycrystalline silicon, etc., by virtue of their formation processes, exhibit intrinsic stresses. Large localized stresses are induced in the silicon substrate near the edges and corners of such structural elements. Oxidation of nonplanar silicon surfaces produces another kind of stress that can be very damaging, especially at low oxidation temperatures. Mismatch of atomic sizes between dopants and the silicon, and heteroepitaxy produce another class of strain that can lead to the formation of misfit dislocations. Here we review the achievements to date in understanding and modeling these diverse stress problems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349282
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  • 2
    Electronic Resource
    Electronic Resource
    Misfit dislocations and critical thickness of heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7901-7903 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An expression is derived for the critical thickness of heteroepitaxial films by taking the energy minimization approach. It is exactly identical to the critical thickness obtained by Matthew and Blakeslee [J. Cryst. Growth 27, 118 (1974)] using a force balance approach, after allowing for a discrepancy judged to be an unmentioned approximation in the latter. The equivalence of the two formulations is explained conceptually. The reason is pointed out for the very different critical thickness obtained by People and Bean [Appl. Phys. Lett. 47, 322 (1985); 49, 229 (1986)] using the energy minimization approach. It is further shown that misfit dislocations do not appear en masse catastrophically when the critical thickness is reached. Rather, their density increases gradually with the epitaxial thickness, approaching only asymptotically a value required for a complete relief of film stress as the thickness tends to infinity. Any observed sudden mass appearance of misfit dislocations must be attributed to a substantial supercritical thickness actually existing, prior to nucleation of dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347476
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  • 3
    Electronic Resource
    Electronic Resource
    Erratum: Misfit dislocations and critical thickness of heteroepitaxy [J. Appl. Phys. 69, 7901 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4009-4009 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349174
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  • 4
    Electronic Resource
    Electronic Resource
    Low-threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7892-7894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double heterostructure InGaAs-GaAs strained-layer single quantum well ridge waveguide lasers grown by molecular beam epitaxy were fabricated by using in situ laser monitored reactive ion etching to form the ridges. Continuous-wave threshold current as low as 3.5 mA was obtained on a ridge laser diode of 3.3 μm wide and 215 μm long having cleaved mirrors. The lasing wavelength is at 0.988 μm and the measured differential external quantum efficiency is 61%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347473
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  • 5
    Electronic Resource
    Electronic Resource
    The expansion of product probability distributions from trajectory calculations in two-dimensional Fourier series (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 1958-1965 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The procedure for expanding product probability density functions determined from a classical trajectory study in a two-dimensional Fourier series is developed. This method has the advantage that essentially all of the information obtained from the trajectories is retained in the expansion; consequently, the resolution of the density functions is high. A smoothing technique using a Gaussian filter is also presented. The results are applied to a quasiclassical study of the F+H2 reaction, and new insights are obtained for this reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455094
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  • 6
    Electronic Resource
    Electronic Resource
    Kinetics of interstitial supersaturation and enhanced diffusion in short-time/low-temperature oxidation of silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4527-4532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of the supersaturation of self-interstitials and the enhancement of impurity diffusivity in short-time/low-temperature oxidation of silicon is investigated analytically. It is found that, whereas in long-time/high-temperature oxidation the interstitial supersaturation and the diffusivity enhancement decrease with time as t−n (n(approximately-equal-to)0.2–0.3), in short-time low-temperature oxidation they start from zero and increase with time, until some characteristic time determined by the linear-parabolic oxide growth. This characteristic time increases rapidly with the decrease of temperature. This kinetic behavior has not been expected previously, mainly because there is no available data on stacking fault growth and on diffusion enhancement under the short-time/low-temperature condition which has become common in modern IC processings. The more general case of linear-parabolic oxidation and the effect of bulk recombination have also been analyzed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335353
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  • 7
    Electronic Resource
    Electronic Resource
    Bit-shift performance investigations at different skew angles and for different media orientations : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5649-5651 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bit-shift performance was investigated at different skew angles and for media with different orientation. Results indicate that the bit-shift value increases as the skew angle increases for both planar orientated media and near-isotropic media. As the skew angle increases, the off-track capability, described by the bit shift at different off-track distances, decreases and the bit-shift profile becomes asymmetric. Comparison of normalized bit-shift values (normalized according to the bit shift at 0° skew angle) shows that the bit shift of the near-isotropic media is not as sensitive to skew angle variation as the media with strong orientation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362270
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  • 8
    Electronic Resource
    Electronic Resource
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357279
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  • 9
    Electronic Resource
    Electronic Resource
    High-efficiency and low-threshold InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357408
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  • 10
    Electronic Resource
    Electronic Resource
    Stability of above threshold ionization spectrum during intense-field ionization of H2+ near Rc (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2552-2554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With the collinear model for H2+, we have numerically investigated the photoelectron spectrum of hydrogen molecular ions exposed to an ultrashort intense laser pulse. Above-threshold ionization (ATI) peaks and their temporal evolution are carefully analyzed. We find that once the photon-energy-spaced photoelectron peaks appear, their positions will not shift during the interaction. The stability of ATI spectrum is attributed to the fact that the Stark-shifted ionization potential of H2+ exhibits a minimum plateau during the internuclear distance Rc=3.6–6 bohr in which the stretching H2+ is significantly ionized. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122530
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