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  • 1
    Electronic Resource
    Electronic Resource
    Small-angle neutron scattering study of the flux-line lattice in a single crystal of Bi2.15Sr1.95CaCu2O8+x (invited) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6784-6787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A flux-line lattice (FLL) was observed in a single crystal of Bi2.15Sr1.95CaCu2O8+x (BSCCO) using small-angle neutron scattering methods. The sample has a superconducting transition at 85 K. The flux-line lattice is observed to melt, evidenced by the rapid disappearance of diffracted intensity as the temperature is increased above a field-dependent melting temperature. Diffracted intensity due to the vortex lattice also falls off as the applied field is increased. It is believed that this is a manifestation of the transition of the three-dimensional flux lines into two-dimensional pancake vortices. The Bragg intensity of the FLL peak is inversely proportional to the fourth power of the London penetration depth (λL). Hence, the temperature (T) dependence of the order parameter can be measured quite accurately from the intensity of the Bragg spots at different temperatures. In BSCCO with an applied field of 50 mT, the measured T dependence appears linear. The low-T behavior is of great interest for an understanding of the underlying mechanism for superconductivity in these materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358128
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  • 2
    Electronic Resource
    Electronic Resource
    High field ferromagnetic resonance measurements of the anisotropy field of longitudinal recording thin-film media (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1417-1422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The average value of the magnetocrystalline anisotropy field, Hk, is an important parameter for the characterization of magnetic recording media but is difficult to measure accurately due in part to the effect of interactions between the grains. In order to evaluate Hk we have studied two model CoCrPtTa magnetic films using a number of complementary techniques: high field ferromagnetic resonance (FMR) (35.0–45.0 kOe), low field (〈20 kOe) vector vibrating-sample magnetometry and torque magnetometry. The FMR measurements were performed at a number of discrete frequencies in the range 75–93 GHz using a new quasi-optical spectrometer developed at the University of St. Andrews. The values of Hk derived by FMR (10.8 kOe) are approximately 10% greater than those obtained from conventional magnetometry (9.6 kOe). This difference is believed to be due to the presence of intergranular exchange coupling which reduces the measured value of anisotropy when the applied field is not sufficiently large to completely align the magnetic moments. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428804
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  • 3
    Electronic Resource
    Electronic Resource
    Tertiary recrystallization and magnetic induction under various annealing atmospheres in thin-gauged 3% Si–Fe strip (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5233-5235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface-energy-induced secondary or tertiary recrystallization by grains with a specific surface plane can be freely governed in thin-gauged 3% Si–Fe strips by controlling the bulk content of sulfur and annealing atmosphere. During a vacuum or hydrogen annealing process, a convex profile in segregated-sulfur concentration is formed due to evaporation or desorption of segregated sulfur as a hydrogen sulfide, corresponding to a trough in magnetic induction. High magnetic induction is obtained after the annealing treatments. Final annealing under an argon atmosphere caused a saturation in segregated-sulfur concentration with annealing time. Under this extremely high segregated sulfur, grains of high index crystal plane including {111} continued to grow, resulting in low magnetic induction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373305
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  • 4
    Electronic Resource
    Electronic Resource
    Neutron measurements of the vortex lattice in YBa2Cu3O7 (invited) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5855-5859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction has been used to measure the vortex lattice scattering for YBa2Cu3O7. A square pattern is found when the field is applied along the c axis, while a triangular pattern is found when the field is applied well away from the c axis. High-resolution measurements for the square pattern show that the vortex lattice has long-range orientational order but only short-range positional order. The temperature dependence of the penetration depth is not that expected for a superconductor with a conventional s-wave BCS-type gap. Preliminary measurements for temperatures near the irreversibility line are consistent with the occurrence of melting of the vortex lattice or glass phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353551
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  • 5
    Electronic Resource
    Electronic Resource
    Role of anhydrovinblastine in the biosynthesis of the antitumor dimeric indole alkaloids (1978)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 100 (1978), S. 6253-6255 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00487a060
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetochromatics of the magnetic fluid film under a dynamic magnetic field (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 350-352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and the corresponding magnetochromatics of homogeneous magnetic fluid films under dynamic magnetic fields perpendicular to the film surfaces are investigated in this letter. During the application of a magnetic field from 0 up to 200 Oe, the structure in the magnetic fluid film evolves from a monodispersed state to a disordered-column state, and then to an ordered hexagonal structure. The column spacing for the instant hexagonal structure during the dynamic process was measured and found to vary from 2.41 to 1.83 μm when the field strength was raised from 60 to 200 Oe. Within this range, the hexagonal structure diffracts the visible light like an optical grating. Due to the dynamic variation of the column spacing with the increasing field strength, the color of the diffracted light changed unceasingly from red to blue when observed from a fixed point above the film. The results strongly suggest the possibility that optical devices may be developed by utilizing the magnetochromatics of magnetic fluid films under dynamic magnetic fields. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385796
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  • 7
    Electronic Resource
    Electronic Resource
    Electro-optic characteristics and switching principle of a nematic liquid crystal cell controlled by fringe-field switching (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2881-2883 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a nematic liquid crystal cell associated with a homogeneously aligned to twisted transition of a liquid crystal director. In the absence of an electric field, the liquid crystal molecule is homogeneously aligned under the crossed polarizers, and thus the cell appears to be black. When a fringe field induced by interdigital electrodes is applied, liquid crystal molecules rotate in plane even above electrodes and thus the cell transmits light. The device exhibits a high transmittance ratio as well as a wide viewing angle, which solves a long standing problem of low transmittance existing in the conventional in-plane switching mode. We show that the distance between electrodes smaller than the width of an electrode and cell gap is required for generating fringe field with applied voltage and rotating molecules above electrodes. We also investigate the mechanism of fringe-field switching and dependence of electro-optic effect on different cell conditions and dielectric anisotropy of liquid crystal. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122617
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  • 8
    Electronic Resource
    Electronic Resource
    Low-temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1817-1819 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The partially ionized beam (PIB) deposition technique was used to deposit CoGe2(001) thin films heteroepitaxially on GaAs(100) substrates. The epitaxial arrangement is CoGe2(001)/GaAs(100). It is found that the best epitaxy was obtained with an ion energy around 1100 eV and with a substrate temperature of 280 °C. The wafers were treated only by immersion in HF:H2O 1:10 immediately prior to deposition. Contacts grown at the optimal epitaxial formation conditions displayed Ohmic behavior, while contacts grown at higher or lower substrate temperatures had rectifying behavior. Epitaxial formation of CoGe2, a high melting point, low resistivity cobalt germanide phase, offers the possibility of forming a stable contact to n-GaAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116023
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial quality of thin Ag films on GaAs(100) surfaces cleaned with various wet etching techniques (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 681-683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 2θ and pole figure x-ray analysis have been used to examine the crystal structure and orientation of Ag films deposited on GaAs(100) substrates cleaned by a variety of wet etches. Where epitaxy was observed, it was of the type Ag(110)/GaAs(100). The H3PO4/HCl sequential etch yielded the film with the highest degree of preferred orientation, with the H2SO4/HCl, NH4OH, and HF etches producing films of decreasing quality in the order named. The epitaxial quality is thought to scale with elemental As concentration on the GaAs(100) surface, and have an inverse relationship to the amount of surface oxides present before deposition. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116590
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  • 10
    Electronic Resource
    Electronic Resource
    Reliability of the electrical properties of the BF2+ ion implanted polycrystalline diamond film (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 524-526 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resistance of the BF2+ ion implanted polycrystalline diamond film drifted higher with time when the diamond film was exposed in air. The reliable resistance of the implanted diamond film could be obtained after the heat treatment at high temperature under vacuum. Temperature dependence of the reliable resistance of the BF2+ ion implanted diamond film indicated two activation energies within the temperature range from room temperature to 400 °C. The effect of gas exposure on the resistance of the implanted diamond film was discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109993
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