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  • Digitale Medien  (5)
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  • Digitale Medien  (5)
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  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6181-6187 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The spatiotemporal structure of O2 rf discharges between parallel plates at 13.56 MHz is investigated by using the relaxation continuum model. The results for pressure of 0.5 Torr and the sustaining voltage of 75–200 sin ωt V are studied by considering the elementary particles, O+2, O+, O−2, O−, electrons, and O in O2. In these conditions, atomic oxygen, formed by the dissociative electron impact in O2 with density of ∼1014 cm−3, plays important role to the rf structure through the associative detachment process. That is, the expanding characteristics of the sheath width unique to the O2 rf discharge are realized with increasing the sustaining voltage. The validity of the numerical result is demonstrated with the spatiotemporal structure by the measurement by the spatiotemporally resolved optical emission spectroscopy. The flux of each particle to the electrode is also discussed. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6142-6147 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Oxygen rf glow discharges between parallel plates were numerically analyzed by using the relaxation continuum model. The result at a frequency of 13.56 MHz, sustaining voltage of 150–350 sin ωt V, pressure of 0.15–1.0 Torr, and stainless steel surface, shows that O2(a1Δg) has a number density that is an order of magnitude larger than that of atomic oxygen. The plasma density as a function of pressure has a maximum at about 0.2 Torr, and decreases with increasing pressure due to the increase in the net rate of associative detachment from O− by O2(a1Δg). The comparison between the discharges in two surface materials, stainless steel and copper, indicates that the number densities of O2(a1Δg) and atomic oxygen strongly depend on the surface loss probability, and that consequently the plasma density is also changed by replacing the surface material. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 3
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2644-2646 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An apparatus including a robot manipulated optical system has been built to provide absolute emission data from an inductively coupled plasma operating in argon in non-equilibrium conditions. Data for the two-dimensional population densities of one of the excited states of neutral argon ArI are presented together with the Langmuir probe data for electron density and plasma potential. Measurements were performed at 500 mTorr and 50 mTorr and with 100 sccm flow of argon under the constant power condition, 100 W. The data show that excitation profile is almost identical to the radial profile of electron density. At higher pressure maximum excitation and electron density are produced close to the walls, while at low pressure maximum excitation is at the center of the vessel and a high field is formed close to the walls. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 883-885 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Physical and electrical influences on plasma etching on the inside of a microtrench in SiO2 were numerically investigated using Monte Carlo simulation of ions and electrons with the aid of surface charge continuity and Poisson's equation. When the aspect ratio is greater than seven, the bottom is charged up to a potential sufficient to prevent the influence of all the incident ions, with a realistic initial energy of 300 eV for SiO2 etching within the period required for monolayer stripping, resulting in etch stop. The cause of etch stop is purely the result of the electrical local charging due to the topography of the trench, and of the initial conditions for incident charged particles. The etch stop caused by a cw plasma will be disorganized or prevented within a short time by the aid of ion–ion plasma in an afterglow phase. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
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  • 5
    Digitale Medien
    Digitale Medien
    New York : Wiley-Blackwell
    Journal of Polymer Science Part B: Polymer Letters 8 (1970), S. 755-760 
    ISSN: 0449-2986
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Chemie und Pharmazie
    Zusätzliches Material: 6 Ill.
    Materialart: Digitale Medien
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