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  • 1
    Electronic Resource
    Electronic Resource
    Indium doping of CdTe and Cd1−xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2927-2940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe and Cd1−xZnxTe layers and microstructures were doped with indium donors during their growth at low temperatures (200–220 °C) by molecular-beam epitaxy under Cd overpressure. Uniform and planar doping of layers and local doping of quantum wells and superlattices are presented. Characterization techniques include secondary-ion mass spectroscopy (SIMS), capacitance-voltage and Hall-effect measurements, optical spectroscopy, x-ray double diffraction, and x-ray photoelectron spectroscopy. In the range of indium concentrations 2×1016–1×1018 cm−3, the donor activation efficiency is 100% for uniform doping. A low-temperature carrier mobility of up to 5300 cm2/V s is obtained. The highest measured carrier concentration is 1.3×1018 cm−3; at a higher doping level, strong compensation occurs, related to dopant migration and cadmium vacancy formation. Planar doping also yields ≈100% activation efficiency for moderate values of sheet density (≈1011 cm−2) but has the same limit of about 1018 cm−3 for total carrier concentration. High-structural-quality planar-doped quantum wells and superlattices are obtained. Good localization of dopant is demonstrated by SIMS at low sheet density but at high concentration substantial migration of indium occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351496
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of the epitaxial growth mechanism of ZnTe on (001) CdTe (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3104-3110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first stages of the growth of highly strained ZnTe on (001) CdTe are investigated by reflection high energy electron diffraction, HRTEM (high resolution transmission electron microscopy), x-ray photoelectron spectroscopy, and x-ray double diffraction. A precise study of the factors influencing the critical thickness is presented, with emphasis on the effect of Zn pre-exposure of the CdTe surface on the subsequent ZnTe growth. Below the critical thickness small lattice distortions attributed to a nontetragonal elastic distortion are detected. An exposure of the (001)CdTe surface to a Zn flux leads to the desorption of the Cd atoms present on the top of the surface and to the formation of a c(2×2) reconstructed surface with half a monolayer of Zn on the top of the surface. Finally, the morphology of an ultrathin strained ZnTe layer embedded in a (001)CdTe matrix will be discussed using results obtained from analysis of the digitized HRTEM image. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358661
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  • 3
    Electronic Resource
    Electronic Resource
    Nitrogen acceptors confined in CdZnTe quantum well structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2070-2073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nitrogen acceptors confined in a CdZnTe single quantum well, grown by molecular beam epitaxy, are investigated by different optical methods. The transitions related to nitrogen acceptors confined in the well are observed in the doping range between 1017 and 1018/cm3. The temperature and excitation intensity dependence of the nitrogen-related transitions in photoluminescence spectra indicates that these transitions correspond to the nitrogen acceptor bound excitons and to free electron to neutral nitrogen acceptor recombination. The binding energy of nitrogen acceptors confined in an 130-A(ring)-wide Cd0.96Zn0.04Te/Cd0.86Zn0.12Te structure is deduced to be 51.7±0.5 meV from this study. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361063
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  • 4
    Electronic Resource
    Electronic Resource
    Luminescence characterization of CdTe:In grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2651-2653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the incorporation of indium as a shallow donor in CdTe by molecular beam epitaxy. Using proper surface stoichiometry conditions, we demonstrate that it is possible to incorporate and activate up to 1018 cm−3 indium impurities. The doped layers have been characterized by secondary-ion mass spectroscopy, capacitance-voltage and Hall-effect measurements. Photoluminescence (PL) and resonant excitation of the PL clearly identify indium as the chemical dopant, acting as an effective mass donor with an energy of 14 meV. Incorrect stoichiometry conditions lead to a poor dopant activity and to complex centers formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104797
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  • 5
    Electronic Resource
    Electronic Resource
    Critical thickness in epitaxial CdTe/ZnTe (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 292-294 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical thickness for coherent growth of CdTe on ZnTe by molecular beam epitaxy is assessed by reflection high-energy electron diffraction, low-temperature photoluminescence, and transmission electron microscopy. The value is found to be 5 monolayers for this high mismatch system (6%). As opposed to similar studies on III-V and Si-Ge systems, there is no evidence of island formation before relaxation by dislocations at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102812
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  • 6
    Electronic Resource
    Electronic Resource
    Optical study of residual strains in CdTe and ZnTe layers grown by molecular beam epitaxy on GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 235-237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual strains in (001) and (111) thick layers of CdTe and ZnTe grown by molecular beam epitaxy on nominal or slightly tilted (001) GaAs have been investigated by reflectance, photoluminescence, and optical pumping experiments at low temperature. Strains are found to be independent of both layer orientations and thicknesses in the range 2–6 μm. They are compressive ≈−0.5×10−3 in CdTe and tensile ≈10−3 in ZnTe. Estimates of thermal expansion effects show that they are the dominant cause of residual strains in these heterostructures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101917
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  • 7
    Electronic Resource
    Electronic Resource
    X-ray photoemission study of the Te-precursor surfaces and the initial stages of growth of ZnTe on GaAs (100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1690-1692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial stages of epitaxial growth of ZnTe on GaAs (100) have been studied by x-ray photoemission spectroscopy. The two surface structures (6×1 and (3)1/2×3 ) resulting from the adsorption of Te on GaAs (100) were used as precursor for ZnTe growth. Each of these structures is characterized by two different adsorbed Te states. For the 6×1 structure, the two states are assigned to As–Te–As and tentatively to Te–Te–Te bonds; and for the (3)1/2×3 structure, the assigned bonds are As–Te–As and GaGa Te–As. Growth of ZnTe (100) does not induce any change in the bonds associated with the 6×1 structure but modifies that associated with the (3)1/2×3 surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98545
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of (111) CdTe on tilted (001) GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 828-830 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Twin-free growth of (111) CdTe on (001) GaAs is reported for substrates tilted around the [11¯0] axis, i.e., exposing Ga dangling bonds at the terrace edges. Layers grown on nominally (001) substrates and tilted substrates are characterized by double crystal x-ray diffraction, low-temperature reflectivity and photoluminescence, channeling, and high-resolution transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100859
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  • 9
    Electronic Resource
    Electronic Resource
    "New donors'' in silicon: An interface effect due to internal oxidation (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3192-3195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The analysis of Czochralski-silicon annealed in the range 500–800 °C is performed using infrared transmission, electron paramagnetic resonance and admittance spectroscopy measurements. It is shown that the experimental data and especially, new original data obtained with the pulsed admittance spectroscopy technique are consistent with a new model. The "new donors'' effect would in fact be the result of the inversion layer around silica precipitates. This model is demonstrated taking in account the known properties of the Si/SiO2 interface (between precipitates and the silicon crystal). The electrical conduction is shown to be a percolation process through an inhomogeneously conducting material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337735
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  • 10
    Electronic Resource
    Electronic Resource
    Donor doping of (211) CdTe epilayers and CdTe/CdZnTe piezoelectric heterostructures by molecular beam epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2106-2108 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow indium donors have been incorporated in (211) CdTe and CdZnTe epilayers by molecular beam epitaxy. For this orientation, no Cd overpressure is necessary to incorporate the indium donors. Essentially 100% activation of donors was obtained in the 1016–7×1017 cm−3 concentration range. Electron mobility was 7300 cm2 V−1 s−1 at 40 K for 3×1015 donors cm−3. Transmission electron microscopy shows that the doped (211) CdTe layers have high structural quality. Optical spectra of modulation-doped (211) CdTe/CdZnTe quantum wells show that an electron gas present in a piezoelectric CdTe well produces strong screening of the internal electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110554
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