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  • 1
    Electronic Resource
    Electronic Resource
    Probe beam heating of AlGaAs single-quantum-well laser facets in Raman microprobe spectroscopy (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5930-5932 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The facet temperature of AlGaAs single-quantum-well laser diodes were examined via Raman microprobe spectroscopy. The facets were fabricated either by cleaving in air or by chemically assisted ion-beam etching. The ridge width was 5 μm. Large sample-dependent variations in the heating induced by the argon probe beam are observed. These variations correlate with the appearance of disorder-induced modes in the Raman spectrum and the bias current-induced heating of the laser facet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346923
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  • 2
    Electronic Resource
    Electronic Resource
    Soft, entirely photoplastic probes for scanning force microscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2398-2401 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new probe made entirely of plastic material has been developed for scanning probe microscopy. Using a polymer for the cantilever facilitates the realization of mechanical properties that are difficult to achieve with classical silicon technology. The new cantilever and tip presented here are made of an epoxy-based photoplastic. The fabrication process is a simple batch process in which the integrated tip and the lever are defined in one photolithography step. The simplicity of the fabrication step, the use of a polymer as material, and the ability to reuse the silicon mold lead to a soft low-cost probe for scanning force microscopy. Imaging soft condensed matter with photoplastic levers, which uses laser beam deflection sensing, exhibits a resolution that compares well with that of commercially available silicon cantilevers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149767
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  • 3
    Electronic Resource
    Electronic Resource
    Raman microprobe study of the time development of AlGaAs single quantum well laser facet temperature on route to catastrophic breakdown (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 557-559 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The facet temperature and output power of uncoated AlGaAs single quantum well lasers operated at constant current were measured as a function of time until catastrophical breakdown. The temperature rise is observed to consist of two regimes−an initial linear temperature rise accompanied by a gradual power degradation followed by a rapid nonlinear temperature rise at what appears to be a critical temperature leading to catastrophical optical damage (COD). The time to COD and the pre-COD facet temperature rise rate are found to have a strong dependence on the diode output power. This facet temperature behavior plus the data obtained from an argon laser probe beam induced heating experiment provide valuable information regarding the mechanisms leading to COD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104585
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Conductance statistics of small-area ohmic contacts on GaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2216-2218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductance distributions of very small-area alloyed ohmic contacts on n+-GaAs have been studied as a function of lateral contact size d, with d ranging from 4 μm down to 0.3 μm. The data are fairly well represented by a Poisson distribution, which takes into account the granularity of the alloyed contacts, as previously reported. We deduce an average distance of dc (approximately-equal-to)0.41 μm between conducting grains and a dead zone of ld (approximately-equal-to)600 A(ring) due to dry etching of the GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102971
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  • 5
    Electronic Resource
    Electronic Resource
    Resistance of very small area ohmic contacts on GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1735-1737 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very small area, alloyed ohmic contacts on n+-GaAs etched mesas have been fabricated and their resistance measured. The nominal contact size ranges from 10 down to 0.1 μm on a side. The data show an extremely large increase of the resistance spread as the contact size is reduced. Grain size effects in the alloyed contacts and dead zones due to ion etching are discussed as possible causes for the observations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102278
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  • 6
    Electronic Resource
    Electronic Resource
    Stepwise-graded-index multilayer broadband low-reflectivity coating for AlGaAs/GaAs power lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 942-944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new type of optical low-reflectivity coating and its application to GaAs/AlGaAs power lasers. The low-reflectivity region of this coating extends over a broad wavelength range, therefore making the overall reflectivity much less sensitive to thickness variations as compared to single-layer coatings. In addition, only two materials (SiO2 and a-Si:H) are required, thus making it very easy to fabricate such coatings with standard deposition techniques such as plasma-enhanced chemical vapor deposition (PECVD) or ion beam sputtering. Finally, the optical quality of coatings deposited by PECVD was confirmed by measurements on power lasers, showing optical power outputs in excess of 60 W/mm, among the highest reported value for coated mirrors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102453
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facets (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1005-1007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The facet temperature of AlGaAs ridge waveguided single-quantum-well lasers with various ridge widths and cavity lengths were measured as a function of output power and injection current using Raman microprobe spectroscopy. The facet temperature was found to scale with the injection current density rather than the photon flux. In addition, no large discontinuities were found below and above the lasing threshold, suggesting that the absorption of the emitted photons plays only a minor role in the facet heating. These data imply that the facet heating during the initial slow degradation regime is due to the surface nonradiative recombination of carriers and is primarily determined by the injection current density. This could be contrasted to the catastrophic optical damage regime where the lasing photons play a key role in the heating process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106326
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of the facet heating behavior between AlGaAs single quantum-well lasers and double-heterojunction lasers (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1043-1045 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The facet heating behavior of AlGaAs double-heterojunction (DH) lasers was measured as a function of injection current using Raman microprobe spectroscopy. The result from the DH lasers is compared to AlGaAs ridge-waveguided single quantum-well (SQW) lasers. A clear discontinuity in the facet temperature rise was found below and above the lasing threshold for the DH lasers, indicating a substantial contribution to facet heating by the photon flux. This is in contrast to the facet heating behavior of SQW lasers in which photon flux has been shown to play only a minor role. The data suggest a large difference in the facet absorption of the lasing photons between the two types of lasers. This is further supported by the effect of argon laser probe beam induced facet heating on the diode laser's output power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106438
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  • 9
    Electronic Resource
    Electronic Resource
    Sequential position readout from arrays of micromechanical cantilever sensors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 383-385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sequential position readout from a microfabricated array of eight cantilever-type sensors (silicon technology) is demonstrated. In comparison with single sensors we find that mechanical disturbances from noise, such as from vibrations, turbulent gas flow, or abrupt pressure changes, can be effectively removed in array sensors by recording difference signals with respect to reference cantilevers. We demonstrate that chemically specific responses can be extracted in a noisy environment using a sensor to detect specific chemical interactions and an uncoated cantilever as reference. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120749
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  • 10
    Electronic Resource
    Electronic Resource
    Highly parallel data storage system based on scanning probe arrays (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3299-3301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter discusses an alternative storage approach to conventional magnetic data storage. The approach uses a 32×32 array of scanning probe microscopes working in parallel to read and write data as small indentations in a polymer storage medium. The results have densities of 100–200 Gbit/in.2. At such densities, it is shown that well over half the array works, and at lower densities more than 80% of levers are working. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326486
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