ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Dislocation etching of GaSe single crystals was investigated by using a dilute chromic-sulphuric acid mixture, when conical etch pits were revealed on the (0001) surfaces. At the apices of spiral growth hills, bunches of spiral dislocations were revealed, proving that it is not a single screw dislocation of large Burgers vector, but a bunch of co-operating screw dislocations that were responsible for the spiral growth formations of large step-height. In the case of GaSe crystals, grown by vapour transport methods, dislocation densities of 102 to 106 cm−2 were found. The Bridgman crystals investigated were completely free from non-basal dislocations.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00553586
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