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  • 1985-1989  (3)
  • 1988  (1)
  • 1985  (2)
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  • 1985-1989  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 618-619 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of A15 Nb3Al have been prepared by reactive diffusion of sputter-deposited Nb/Al multilayers. The diffusion reactions were studied by in situ annealing x-ray diffraction in the temperature range 50–950 °C. Initially the Nb and Al sublayers react to form the phase NbAl3. This interface reaction prevents the formation of the σ-phase Nb2Al, frequently found as a second phase in A15 Nb3Al materials; NbAl3 reacts with the remaining Nb to form the A15 phase. The highest Tc, 16.2 K measured resistively and 15.2 K inductively, was found in a Nb/Al multilayer with an A15 cell parameter a0=5.195 A(ring) which corresponds to ∼20 at. % Al. From a comparison with previous investigations of the Tc dependence on Al concentration and A15 cell parameter, it is concluded that a small amount of the A15 phase has a higher composition of 22–23 at. % Al.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2103-2109 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Preparation and characteristics of refractory Nb/Al-oxide-Nb Josephson tunnel junctions with critical current densities jc from ∼103 to ∼4×104 A/cm2 were studied with respect to junction quality, uniformity, reproducibility and jc control. The key steps leading to improved junction parameters are emphasized and compared with previously used procedures. The results include jmaxc/jminc of 1.2, on a 1-in. chip, Vm up to 56 mV in junctions with jc∼103 A/cm2, and Vm up to 24 mV with jc∼6×103 A/cm2. Good run-to-run reproducibility and control of jc are also demonstrated. In particular, jc is shown to increase by a factor of ∼40 when the oxygen pressure during the in-situ oxidation of the Al overlayer is reduced from 1 to 0.01 Torr.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0630
    Keywords: 74 ; 66.30 ; 82.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The change in electrical resistance with time for bulk, thick-film, and thin-film Ba2YCu3Ox at atmospheric pressure is described as a function of the oxygen partial pressure (100 to 0.001%) and temperature (320°–750°C). The potential usefulness of these materials as oxygen sensors is demonstrated. The rate of equilibration is faster during oxygen uptake than during its loss. Time constants τ to reach equilibration (1/e remaining), qualitatively scale with sample dimensions. For a 1μm film at 600° C,τ 〈1 s for the range of PO2 (O2 being a shorthand for O2) from 100% to 0.001%. The rate increases markedly with increasing PO2. The actual resistance decreases with PO2 at a rate of logρ/log PO2 = 0.4 at 700° C showing adequate sensitivity for sensor purposes. Times for the transient resistance change in the sample where used to estimate the oxygen diffusion coefficient in the ceramic. The diffusivities obtained are 4·10−11−1·10−12 cm2/s in the 435°–320° C range, with an activation energy of ≅27 kcal/mole.
    Type of Medium: Electronic Resource
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