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Galvano-magnetic thin film sensors (abstract) (1985)

Hoffmann, Horst

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 3831-3831

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Magnetoresistance detectors are used to observe the magnetic state of microscopic parts of magnetized samples. The planar Hall effect can be used instead. Both effects can be applied to find out the logic "1'' or "0'' state of magnetic storage devices. They also can be used for a quantitative and sensitive measurement of magnetic fields as well as a magneto-elastic strain gauge. Soft magnetic permalloy films are appropriate for the field detection while amorphous Fe1−xBx films are suitable for the strain measurements. The sensor films have to show a uniaxial anisotropy. The strength of it determines the range of the detectable fields and strains. The sensitivity of the magnetoresistance emr=dΔU/dH=2( ρ⊥−ρ(parallel)) 1/db JH/HK2(V/Oe) depends linearly on the magnetic field H applied along the hard axis. l, d, b are the film length, thickness and width, respectively. The sensitivity of the planar Hall effect, which is given by epl=dUpl/dH =( ρ(parallel)−ρ⊥)s/db J(1/HK) is independent of the applied field along the hard axis as long as H(very-much-less-than)HK. s is the separation of the Hall contacts. Both sensitivities are reciprocal to the uniaxial anisotropy, HK as long as the applied field, H is smaller than HK. The theoretically expected sensitivity usually is decreased by domain splitting and the influence of the magnetization ripple. The smaller HK is (the larger the sensitivity is) the stronger is the influence of the ripple. It gives an upper limit of the interval in which external fields or applied strains can be quantitatively measured. Double layered films can prevent the domain splitting. The sensor theory including the ripple and experimental data will be given.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.334937

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Untersuchungen an Zinnverbindungen. II. Schwingungsspektren und chemisches Verhalten von Trimethylzinnhydroxyd und Hexamethyldistannoxan (1962)

Kriegsmann, Heinrich ; Hoffmann, Horst ; Pischtschan, Susanne

Weinheim : Wiley-Blackwell

Zeitschrift für anorganische Chemie 315 (1962), S. 283-290

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ISSN: 0044-2313

Keywords: Chemistry ; Inorganic Chemistry

Source: Wiley InterScience Backfile Collection 1832-2000

Topics: Chemistry and Pharmacology

Description / Table of Contents: The RAMAN- and TR-spectra of solid, fused, and dissolved (CH3)3SnOH and liquid (CH3)3SnOSn((CH3)3 are reported and the frequencies axe assigned. The spectra of Cl3SnOH and Cl3SnOCH3 · CH3OH are measured to establish the assignement of the SnO-stretching frequency. (CH3)3SnOH forms no H-bridges but associates building Sn-O-Sn-bridges. In aqueous solutions, (CH3)3SnOH is partially dissociated.

Notes: Die RAMAN- und IR-Spektren des festen und in H2O bzw. CCl4 gelösten (CH3)3SnOH und des flüssigen (CH3)3SnOSn(CH3)3 werden mitgeteilt und die Frequenzen zugeordnet.Zur Sicherung der SnO-Valenzschwingung wurden außerdem die Spektren des Cl3SnOH und Cl3SnOCH3 · CH3OH gemessen. Die Spektren zeigen, daß das |CH3|3SnOH nicht über Wasserstoffbrücken, sondern über Sn-O-Sn-Brücken assoziiert. Der so erreichte Zustand ist offensichtlich sehr stabil, so daß das (CH3)3SnOSn(CH3)3 bereits bei Einwirkung kleinster Mengen Wasser in (CH3)3SnOH übergeht.In den wäßrigen Lösungen des (CH3)3SnOH treten neben undissoziierter Base (CH3)3Sn+-Kationen auf.

Additional Material: 2 Ill.