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  • 1985-1989  (2)
  • 1986  (2)
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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1208-1210 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The pressure dependence of the optical phonons in LiNbO3 to 21 GPa and in LiTaO3 to 10 GPa has been investigated by Raman spectroscopy, using the diamond anvil cell. All the observed modes increase in frequency with pressure, and no mode softening occurs. This is in contrast to the behavior observed in BaTiO3 and PbTiO3, which are well-known displacive-type ferroelectric. It is suggested that this difference in pressure behavior may stem from a different type of phase transition in LiNbO3 and LiTaO3, namely the order-disorder type.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1013-1031 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article reviews mainly the use of the diamond anvil cell (DAC) for ultrahigh-pressure generation (a few hundred GPa) and the various techniques employed in studying the high-pressure behavior of solids. A brief historical introduction to devices used in the prediamond-anvil era is presented in Sec. I. The basic principles of the modern DAC, ultrahigh-pressure generation, and pressure calibration are presented. Among the techniques used, x-ray diffraction, optical spectroscopy including Raman and Brillouin spectroscopy, microscopy, electrical resistance,and Mössbauer measurements, and positron annihilation studies with the DAC are reviewed. High-temperature–high-pressure (HT–HP) and low-temperature–high-pressure (LT–HP) generation in the DAC, and the problems associated with pressure calibration under these conditions are discussed. A brief section is devoted to the sintered diamond-tipped anvil apparatus, for it offers a very convenient way of studying resistance changes and superconductivity to 50-GPa pressure at normal and at liquid-He temperatures. In Sec. IV, Raman studies on solid H2 and solid N2 to about 150 GPa, p-v studies on Xe, CsI to 50 GPa, the metallization of CsI, and superconductivity of Si high-pressure polymorphs are presented. Present trends and future possibilities for ultrahigh-pressure research are briefly set out in Sec. V.
    Type of Medium: Electronic Resource
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