Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 5080-5083
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The low-temperature thermopower of two-dimensional electron gas has been calculated by using the expression obtained from the Boltzmann equation. The relevant scattering mechanisms are taken into account. It is found that the calculated thermopower increases almost linearly with temperature in the GaAs-AlGaAs and InGaAs-InP structures, but in all cases the results differ widely from the values given by the Mott formula and also from the experimental values. The results are not influenced by phonon scattering and are slightly affected if the impurity density is changed by the order of magnitude. For high-mobility samples, the experimental values are higher than the theoretical ones and it seems that phonon drag thermopower may account for the difference. For low-mobility samples, however, the experimental values are lower and in some cases decrease with temperature. The present model is then inadequate. Possible refinements of the theory are suggested.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338332
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