Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 822-824
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high-frequency operation. The structure combines the high-frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an n-AlGaAs/p-GaAs emitter and base layers on an n-Si collector with improved junction characteristics at the GaAs/Si heterointerface afforded by thermal annealing. This novel device structure combines the advantages associated with a wide band-gap AlGaAs emitter, the high electron mobility of GaAs, and the substantial reduction in device parasitics accorded the self-aligned structure. Additionally, the proposed device offers the possibility of planar GaAs processing. With the use of a compact transistor model, calculations of the high-speed capability of this transistor are presented. For an emitter-base junction area of 1 μm×5 μm, optimized fmax=108 GHz and fmax=ft=89 GHz were computed for the GaAs/Si HBT, compared to 76 and 62 GHz, respectively, for equivalent GaAs/AlGaAs HBT's.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99295
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |