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  • 1985-1989  (23)
  • 1975-1979
  • 1988  (23)
  • 1
    Electronic Resource
    Electronic Resource
    Application of gas chromatography/matrix isolation/Fourier transform infrared spectrometry to the determination of ethyl carbamate in alcoholic beverages and foods (1988)
    s.l. : American Chemical Society
    Analytical chemistry 60 (1988), S. 945-948 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00160a022
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fragmentation of molecular adsorbates by electron and ion bombardment: Methoxy chemistry on Al(111) (1988)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 2406-2411 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: (High resolution) electron energy loss spectroscopy [(HR)EELS] has been used successfully to provide direct spectroscopic evidence regarding details of the molecular fragmentation of methoxy (CH3O) on Al(111) caused by energetic electron and ion beams. Chemisorbed methoxy on Al(111) is produced by heating of adsorbed CH3OH. Irradiation of CH3O(a) by either energetic (∼300 eV) electrons or Ar+ ions results in C–O and C–H bond scission with simultaneous formation of Al–O and Al–C bonds. During electron stimulated desorption the CH3O(a) species undergo sequential fragmentation first to CHx groups that are captured by the surface and in the final decay process to adsorbed carbon. C–O bonds in CH3O(a) are depleted preferentially compared to C–H bonds in CHx(a) species. The electron induced sequential fragmentation of the parent CH3 group (from methoxy) to resultant CHx(a) occurs with an efficiency ∼3 orders of magnitude greater then the subsequent process of CHx(a) →C(a). Cross sections for various bond scission processes in electron and ion bombardment have been estimated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.455034
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ultrathin Au films studied with the scanning tunneling microscope: Topography of insulating surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1656-1657 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning tunneling microscope (STM) can produce high-resolution topographic images of surfaces which, normally, are electrically conducting. We have made STM images of a variety of insulating surfaces which are made conducting by a smooth ultrathin (〉20 A(ring) thickness) Au overlay film. Topographic features of the underlying substrate as small as 10 A(ring) are resolved. Surprisingly, no features of the overlay Au film are seen. These films are useful for obtaining topographic images of a wide variety of surfaces and for STM measurements where a stable conducting surface is required for support of molecules or other microscopic structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99048
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Contact regrowth technique for low-resistance nonalloyed contacts to the hot-electron transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1738-1740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot-electron transistor device. For the investigated InGaAs-based structure, the regrown contacting scheme reported includes an In0.53Ga0.47As layer, in InAs/GaAs strained-layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8×10−7 Ω cm2 to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99811
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Mapping of microelectric and magnetic fields with double-exposure electron holography (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 176-178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The double-exposure electron holographic technique has been put into practical use for the first time. By this method an accurate recording of the distribution of electric and magnetic fields can be directly obtained by the electron microscope without resorting to sophisticated optical manipulation of the holograms. Problems concerning the operative definition of the contour maps are discussed. Experimental results are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99511
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  • 6
    Electronic Resource
    Electronic Resource
    Low-temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 773-775 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the low-temperature metalorganic chemical vapor deposition of InSb on (001)CdTe. This low-temperature process was carried out by a precracking technique. Epitaxial growth with a substrate temperature as low as 185 °C can be obtained using a simple two-stage heater. The deposited films were examined by double-crystal x-ray diffraction, scanning electron microscope, and energy dispersive analysis of x ray. The films grown at 240 °C are stoichiometric, single crystal, and of specular surface morphology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99829
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of YBaCuO films on Si and SiO2 substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 153-155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A very rapid thermal annealing technique has been employed on sputter-deposited YBaCuO films. After an O2 anneal (with or without a N2 preanneal) at temperatures as high as 920 °C for 8–12 s, films on (100)Si and on SiO2 /Si substrates exhibited superconductivity onsets above 95 K and zero resistance in the range 40–66 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100578
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    GaAs-Si heterojunction bipolar transistor (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/Si heterojunction bipolar transistor (HBT) structure is proposed having application for high-frequency operation. The structure combines the high-frequency capability of the GaAs/AlGaAs system with the advanced processing technology of Si. The proposed device consists of an n-AlGaAs/p-GaAs emitter and base layers on an n-Si collector with improved junction characteristics at the GaAs/Si heterointerface afforded by thermal annealing. This novel device structure combines the advantages associated with a wide band-gap AlGaAs emitter, the high electron mobility of GaAs, and the substantial reduction in device parasitics accorded the self-aligned structure. Additionally, the proposed device offers the possibility of planar GaAs processing. With the use of a compact transistor model, calculations of the high-speed capability of this transistor are presented. For an emitter-base junction area of 1 μm×5 μm, optimized fmax=108 GHz and fmax=ft=89 GHz were computed for the GaAs/Si HBT, compared to 76 and 62 GHz, respectively, for equivalent GaAs/AlGaAs HBT's.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99295
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation and electrical properties of polymeric TCNQ and TCNE films by plasma polymerization (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1476-1483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The plasma polymerization of TCNQ (tetracyanoquinodimethane) and TCNE (tetracyanoethylene) was carried out at 13.56 MHz from the gas phase and semiconductive polymeric films were obtained. The electrical conductivities of the films obtained ranged from 10−10 to 10−6 S cm−1 and the Al/polymer/ITO (indium tin oxide) sandwich cells made from the films showed rectifying behavior and photovoltaic response. Photoconductivity was also observed in the films. Infrared spectroscopy, ultraviolet spectroscopy, and x-ray photoelectron spectroscopy were utilized to characterize the structure, and these results as well as those from electrical measurements confirmed that a certain conjugation structure when the π electrons delocalized have been formed in the films. The influence of plasma polymerization conditions on the structure and electrical properties of films is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341821
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 429-431 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In0.53Ga0.47As/In0.52Al0.48As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 μm. For a 150-A(ring)-thick InAs layer doped to 2×1018 cm−3 and a 0.1-μm-thick InGaAs layer doped to 1×1018 cm−3, a specific contact resistance of 2.6×10−8 Ω* cm2 was measured for the nonalloyed contact, while a resistance less than 1.7×10−8 Ω* cm2 is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 °C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341210
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    Paper (German National Licenses)
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