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  • Electronic Resource  (3)
  • 1985-1989  (3)
  • 1989  (3)
Material
  • Electronic Resource  (3)
Years
  • 1985-1989  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2728-2733 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe homoepitaxial layers with high crystalline quality were grown on (100) ZnSe substrates (grown by the iodine vapor transport method) between 190 and 250 °C. The surface morphologies of homoepitaxial layers (homoepilayers) grown below 250 °C were all mirrorlike. The concentration of self-activated (SA) centers is related to the growth temperature. The band-edge photoluminescence (PL) intensity increases drastically with increasing temperature from 190 up to 210 °C, decreases above 210 °C, and the SA-PL intensity increases monotonically as the growth temperature increases. The mechanism of suppressing the occurrence of SA centers below 250 °C is assumed that the concentration of Zn vacancies diffused from the highly iodine-doped ZnSe substrates into the ZnSe homoepilayers reduces at this temperature region. The SA-PL intensity of the ZnSe homoepilayer with the strongest band-edge emission (grown at 210 °C) is the same or weaker than that of the best ZnSe heteroepitaxial layer (heteroepilayer). Below 200 °C, the FWHM of the ZnSe (400) diffraction is 14 arcsec which is the best value we have ever obtained, though the growth temperature seems to be too low to maintain the crystalline quality. The comparison on the crystalline quality with the ZnSe heteroepilayers is discussed in detail from the viewpoints of the epitaxial growth mechanism.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new plane-grating monochromator and calibration chamber were constructed for the radiometric calibration of plasma diagnostic devices. The monochromator is designed to cover a wavelength range of 1.8–238 nm with moderate resolving power of 500±200 in λ/Δλ. To check the performance of the monochromator, spectral distribution and resolution were measured by experiments on photoemission from solids and photoionization of rare gases. The characterization of multilayer reflectors by the use of this beamline is demonstrated.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have fabricated multilayer reflectors of molybdenum-carbon, molybdenum-silicon, and nickel-carbon for x rays of 1–200 A(ring) with an electron beam evaporation method in ultrahigh vacuum. The multilayers were deposited on flat and figured substrates of float glass and superpolished glass with a surface roughness of 2–3 A(ring) (rms). The thickness of a layer pair and the number of layer pairs were 30–100 A(ring) and 10–20, respectively. The x-ray characteristics of these multilayer reflectors were evaluated in the 1.5–200 A(ring) region with characteristic x rays (Cu-Kα, Si-Kα, Al-Kα, and C-Kα) and monochromatized synchrotron radiation. Peak reflectivities of molybdenum-carbon were found to be 70% at Cu-Kα and 40% at Al-Kα in grazing incidence and those of molybdenum-silicon to be more than 30% in the 150–170 A(ring) band in near-normal incidence. On the basis of these experimental results, the x-ray optical properties of multilayers are discussed.
    Type of Medium: Electronic Resource
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