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Electronic stopping power of Si and Ge for MeV-energy Si and P ions (1992)

Keinonen, J. ; Arstila, K. ; Tikkanen, P.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 228-230

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The electronic stopping powers of Si and Ge for 0–30 MeV 29Si and 29P ions are reported. The stopping power was studied by application of a technique of nuclear physics, the inverted analysis of Doppler-shift attenuation data. The measured values at 30 MeV are about 15% lower and at 2 MeV considerably higher than the predictions of the commonly used empirical electronic stopping powers by J. F. Ziegler, J. P. Biersack, and U. Littmark [The Stopping Power and Ranges of Ions in Matter (Pergamon, New York, 1985), Vol. 1]. The experimental nuclear stopping power was taken into account in the deduction of the electronic stopping power.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.106972

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