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Observation of laser emission in an InP-AlInAs type II superlattice (1992)

Lugagne-Delpon, E. ; Voisin, P. ; Voos, M. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 60 (1992), S. 3087-3089

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We report the observation of laser emission at low temperature from an optically pumped InP-AlInAs superlattice grown by metalorganic chemical vapor deposition. Independent measurements of low level photoluminescence excitation and optical absorption show that laser emission occurs between spatially separated conduction and valence levels localized, respectively, in InP and AlInAs, with a calculated wave function overlap as low as 0.04. High radiative efficiency observed in this system is believed to be a genuine consequence of the type II band lineup.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.106760

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