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  • 1990-1994  (3)
  • 1992  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 88 (1992), S. 247-248 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electronic structure of the Li doped large gap semiconductor (insulator) NiO is investigated by photoemission and inverse photoemission spectroscopy. Spectral weight is produced by the Li doping within the gap at 1.4 eV above the top of the valence band. It is interpreted as due to an acceptor level associated with a LiO complex.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0584
    Keywords: Photochemical virus inactivation ; Phenothiazine dyes ; Human fresh plasma ; Neoantigens
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Photodynamic virus inactivation of human fresh plasma mediated by visible light in the presence of the phenothiazine dyes methylene blue or toluidine blue was investigated to determine whether it influences functional, structural, and immunological properties of plasma proteins. The activities of the coagulation factors I, VIII, IX, X, and XI were affected to a certain degree, while those of most other plasma proteins were not. The elution profiles obtained by ion exchange chromatography of untreated and photodynamically treated plasma were almost identical. Using a number of antisera against human plasma and single plasma proteins, different immunochemical techniques revealed identical patterns for untreated and treated plasma. Thus, there was no indication that the photodynamic virus inactivation procedure applied considerably influences the properties of plasma proteins.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 86 (1992), S. 207-215 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The nature of the optical absorption gap in NiO at 4.0 eV is investigated. It is found that this gap is due to a band to band transition, where an electron is taken out of the valence band and placed into the conduction band. The optical gap of 6.0 eV found in Ni∶MgO is of a nature, where an electron is taken out of the oxygen 2p band and placed into the first affinity level of the Ni2+ ion (3d 8L»3d 9L−1). The impurity band created in Ni1−x Li x O by the Li ions is found 2.3 eV below the bottom of the conduction band in agreement with model predictions.
    Type of Medium: Electronic Resource
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