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  • 1995-1999  (3)
  • 1995  (3)
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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3439-3444 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic process of subsurface altered layer formation in a Cu-Pt alloy under Ar+ ion bombardment has been studied by sequential Auger electron spectroscopy (AES) and ion scattering spectroscopy (ISS) measurements. For this study, we recently developed a compact coevaporator, which enables Cu and Pt to be deposited at a constant composition ratio (within ±3 at. %) onto a Si substrate cooled to liquid-nitrogen temperature. The average surface composition of the alloy film was monitored by AES throughout the deposition procedure, and the composition of the topmost atomic layer was measured by ISS right after the end of the film deposition. The data show that the topmost atomic layer was considerably Cu-rich while subsurface atomic layers were of constant composition. During Ar+ ion bombardment, however, the surface composition of Cu, measured by sequential AES and ISS, gradually decreased with time toward a steady-state value. The temporal evolution of the composition profile is described. The surface-segregation constant and radiation-enhanced diffusion coefficient for the Cu-Pt alloy under Ar+ ion bombardment are inferred from the measured composition profile. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 632-634 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isolated diamond particles grown by chemical vapor deposition on a mirror-polished Si substrate have been studied by cross-sectional transmission electron microscopy. Focused ion beam micromachining enabled the cross-sectional specimen to be carved out precisely at the center of the particle. Atomic scale observation of the diamond/Si interface revealed the presence of an ∼3 nm thick amorphous intermediate layer including a few pits around the nucleation site of the particle. Growth mechanism and relationship between growth orientation and internal defect structure of the diamond particle are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 23 (1995), S. 351-362 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We have studied the effect of elastic scattering and analyser geometry on calculations of electron escape depths. A theoretical analysis of the electron escape depth has been presented that shows how it is related to the solid angle for detection and the geometrical configuration of a cylindrical mirror analyser. To estimate the extent to which elastic scattering can modify the values of the escape depth, Monte Carlo simulations of the emission of Auger electrons were carried out for Cu MVV (59 eV), Cu LMM (916 eV), Au NVV (238 eV) and Au MNN (2025 eV) signals. From the calculated depth distributions of signal electrons, we have derived a correction factor for the electron escape depth in terms of the corresponding inelastic mean free path which includes both the effects of elastic scattering and analyser geometry. We have found that elastic scattering reduces the value of the escape depth by several tens of per cent and, depending on the target, signal electron energy and analyser geometry, the ration between the escape depth and the inelastic mean free path varies from 0.4 to 0.6.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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