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  • 1995-1999  (2)
  • 1999  (1)
  • 1997  (1)
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  • 1995-1999  (2)
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  • 1999  (1)
  • 1997  (1)
  • 1998  (7)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4539-4543 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Permalloy films were deposited onto silicon substrates by rf sputtering. Arrays of cylindrical dots with diameter d between 150 and 550 nm were patterned by optical holographic lithography. The dots were arranged on a square lattice with period p, ranging from 310 to 1030 nm. The height h of dots, given by the thickness of the permalloy films, ranged between 10 and 80 nm. The shape of the magnetization loops of the dot arrays depends strongly on the aspect ratio r=d/h. The in-plane saturation field is given by the intrinsic demagnetization field of single, isolated dots. The dipolar interaction between the dots is negligible. For cylinders with elliptical base plane, the magnetization loop depends on the field direction. The measured magnetization loops of the arrays are the superposition of the magnetization loops of the single dots without dipolar interaction. A model of magnetization reversal in applied fields is given. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2559-2561 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/ GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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