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  • 1995-1999  (3)
  • 1998  (3)
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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Thermal donor formation and annihilation at temperatures above 500 °C in Czochralski-grown Si (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3561-3568 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal donors (TDs) are generated in Czochralski (CZ)-grown silicon by heat treatments around 450 °C. They form several individual effective-mass-like donors with slightly different ionization energies and act as double donors (TDx0,TDx+). Heat treatments at elevated temperatures (e.g., 〉500 °C) lead to a competition of the formation and the annihilation of TDs. We studied the formation and the annihilation of TDs in the temperature range between 520 and 700 °C. CZ-grown Si samples with an initial total TD concentration of ∼5×1015 cm−3 were employed to study the annihilation of TDs. The number of interstitial oxygen atoms generated per annihilated TD center depends on the temperature and ranges from 4 to 24. For the temperature range investigated the activation energy for thermal annihilation of TDs was determined to be 2.5±0.4 eV. The same CZ-Si material but with an initial TD concentration of ∼2×1013 cm−3 was used to study the formation of TDs. During annealing, the concentrations of individual TDs reach equilibrium concentrations, which depend on the temperature of the final annealing step and the total oxygen concentration. We demonstrate that a model in which the individual TDx centers are represented by oxygen clusters of different sizes consistently explains our experimental data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368586
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1214-1216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall-effect measurements were conducted on unintentionally doped n-type GaN films grown on sapphire substrates by hydride vapor phase epitaxy. Film nucleation involved either a GaCl or ZnO pretreatment. Variable temperature Hall-effect measurements reveal a dependence of both the electron concentration and the Hall mobility on film thickness. We demonstrate that this dependence is indicative of a nonuniform distribution of electrically active defects. For GaCl-pretreated sapphire the presence of a highly conductive, 200-nm-thick near-interface layer is likely to account for the observed phenomena. For ZnO-pretreated sapphire the Hall-effect data clearly indicate a continuous reduction of the defect density with increasing film thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121017
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1375-1380 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.264-268.1375.pdf
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