ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Effects of cesium related reactions are investigated using a simulation code for H− ion sources. Effects begin to appear when cesium density is 1011 cm−3, but are still small and become large when the cesium density is greater than 1012 cm−3. The H− density decreases due to electron detachment. Decreasing the plasma potential by cesium seeding results in 12% smaller H− density. The minimum of the plasma potential shown experimentally by Bacal is found to correspond to a cesium coverage of 50% with the use of Langmuir adsorption isotherm. Surface production is effective only when the cesium density is around 1011 cm−3. For cesium density greater than 1012 cm−3, the effect of the cesium related volume reaction becomes larger. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1148646
Permalink
