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  • 1
    Electronic Resource
    Electronic Resource
    Investigations in the Structure Properties of Magnetooptical Multilayers with Fe, Tb and Nd (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 459-462 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.287-288.459.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Nucleic acid content of Synechococcus spp. during growth in continuous light and light/dark cycles (1998)
    Springer
    Archives of microbiology 170 (1998), S. 201-207 
    Details
    ISSN: 1432-072X
    Keywords: Key words Cyanobacteria ; Nucleic acid content ; Circadian rhythms ; Cell division ; Ribosomal RNA
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract Light-limited batch cultures of Synechococcus spp. strains PCC 6301 and WH 8103 exhibited a positive correlation between the specific growth rate and the cellular content of both RNA and DNA. The ratio of RNA to DNA increased with the growth rate in Synechococcus sp. strain WH 8103, as it does in heterotrophic bacteria, but remained constant in Synechococcus sp. strain PCC 6301. The cellular content of nucleic acids decreased during light periods and increased during dark periods in Synechococcus sp. strain PCC 6301 entrained by 12-h light/ 12-h dark (diurnal) cycles. This result was unexpected in light of experiments demonstrating a circadian increase in transcriptional activity during the subjective light periods and a decrease in transcriptional activity during subjective dark periods. The cyclical variation in cellular nucleic acid content during diurnal cycles appears to be in part a function of the timing of cell division and will influence estimates of in situ growth rates or relative abundances of cyanobacteria using oligonucleotide probes complementary to 16S rRNA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002030050634
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  • 3
    Electronic Resource
    Electronic Resource
    Magneto-Optical Fe/Tb/Nd/Tb Multilayers: Anisotropy and Kerr Rotation (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 467-472 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.287-288.467.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Single-electron effects in slim semiconductor superlattices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1982-1984 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated laterally confined GaAs–AlGaAs superlattices with diameters between 500 nm and 2 μm. With decreasing device diameter, a gap evolves in the current–voltage curve around zero bias and steps show up at the onset of the current. This behavior is interpreted in terms of Coulomb blockade, a depletion of the center of the superlattice, and single-electron tunneling through donor levels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122342
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  • 5
    Electronic Resource
    Electronic Resource
    Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1892-1894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanosecond nondegenerate optical pump-probe experiments have been performed on InGaN thin films and InGaN/GaN multiple quantum wells. Bleaching of absorption of the localized band tail states was observed with increasing excitation density (Iexc) of the pump pulse. The dynamics of the bleaching was found to depend on the localization depth of the band tail states and on Iexc. With high Iexc, large blueshifts in the spontaneous emission luminescence peaks were also observed, the magnitude of which was again found to depend on the localization depth of the band tail states. Stimulated emission is observed from the samples with increasing Iexc and correlates with significant changes in the behavior of the absorption bleaching. The observed bleaching dynamics of the band tail states are well explained by considering the effective lifetime of the band tail states as measured by time-resolved photoluminescence experiments. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122317
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  • 6
    Electronic Resource
    Electronic Resource
    Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3689-3691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high-energy peak was observed to always be lower than that of the low-energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122864
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  • 7
    Electronic Resource
    Electronic Resource
    Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 560-562 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation photon energy (Eexc) to further understand the origin of SE in these structures. Optically pumped SE was observed for excitation photon energies well below that of the absorption edge of the MQWs, indicating the states responsible for the soft absorption edge in these structures can efficiently couple carriers with the gain region. "Mobility edge"-type behavior in the SE peak was observed as Eexc was varied. The effective mobility edge measured in these SE experiments lies ∼110 meV above the main spontaneous emission peak and ∼62 meV above the SE peak. Tuning the excitation energy below the mobility edge was found to be accompanied by a drastic increase in the SE threshold due to a decrease in the effective absorption cross section. The experimental results indicate that the SE peak observed here has the same microscopic origin as the spontaneous emission peak, i.e., radiative recombination of localized states. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121855
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  • 8
    Electronic Resource
    Electronic Resource
    Large optical nonlinearities near the band gap of GaN thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1504-1506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interband optical transitions in single-crystal GaN films grown by metal organic chemical vapor deposition have been studied at 10 K and room temperature using nondegenerate nanosecond optical pump-probe techniques. At low temperatures, strong, well-resolved features are seen in the absorption and reflection spectra corresponding to the 1s A and B exciton transitions. These features broaden and decrease in intensity due to the presence of a high density of photoexcited free carriers and are completely absent in the absorption and reflection spectra as the excitation density, Iexc, approaches 3 MW/cm2, resulting in induced transparency in transmission measurements. The absorption spectra also show induced absorption below the band gap as Iexc is increased. Both the observed induced transparency and induced absorption were found to be extremely large, exceeding 4×104 cm−1 as the pump density approaches 3 MW/cm2 at 10 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121040
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  • 9
    Electronic Resource
    Electronic Resource
    Single- and multi-wall carbon nanotube field-effect transistors (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2447-2449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122477
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  • 10
    Electronic Resource
    Electronic Resource
    High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1623-1625 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Stimulated emission (SE) in optically pumped InGaN/GaN multiquantum well (MQW) structures grown by metalorganic chemical vapor deposition was experimentally studied in the temperature range of 175–575 K. The GaN barriers were intentionally doped with a different Si concentration ranging from 1×1017 to 3×1019 cm−3 and the effects of Si doping of GaN barriers on the optical properties of InGaN/GaN MQWs were investigated. The SE threshold was measured as a function of temperature and compared with bulk GaN. We observed that the SE threshold had a low value and a weak temperature dependence: for example, ∼25 kW/cm2 at 175 K, ∼55 kW/cm2 at 300 K, and ∼300 kW/cm2 at 575 K for one of the samples. Low SE thresholds are attributed to the high-quantum efficiency of the MQWs, possibly associated with the large localization of excitons. The characteristic temperature of 162 K was derived from the temperature dependence of the SE threshold. The integrated emission intensity versus pumping density was examined for different temperatures. This study shows that InGaN/GaN MQWs are suitable for development of laser diodes that can operate well above room temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121133
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