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  • 2000-2004  (3)
  • 1880-1889
  • 2001  (3)
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  • 2000-2004  (3)
  • 1880-1889
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  • 1
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 114 (2001), S. 3752-3764 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The energetics of Pb film grown at 300 K on two well-defined oxides [a MgO(100) thin film and a p(2×1)-oxide on Mo(100)] have been measured using single-crystal adsorption microcalorimetry. The evolution of the film morphology was followed using Auger electron spectroscopy (AES). An initial heat of adsorption of 103 kJ/mol is observed for the Pb/MgO(100) system. Auger results indicate that this is due to the formation of an ∼20 atom Pb island in the first pulse of Pb gas incident on the MgO(100) surface. This allows the extraction of a Pb–MgO(100) bond energy of ∼32±2 kJ/mol in the small two-dimensional particles formed in the first pulse. As more Pb is deposited onto the MgO(100) surface, the Pb forms three-dimensional islands. The integral of the heats of adsorption up to high coverage indicates an adhesion energy of 76.5±∼20 μJ/cm2 for large 3D Pb particles to the MgO(100) substrate. This indicates a Pb–MgO(100) bond energy of 49±13 kJ/mol at the 3D interface. Similar analyses of the Pb/p(2×1)-oxide on Mo(100) surface give an initial heat of adsorption of 146.2 kJ/mol and an adhesion energy of 82.5±20 μJ/cm2 for thick Pb films. This indicates a bond energy of 52±12 kJ/mol for a Pb atom to this surface at the interface of a thick Pb film. The metal's sticking probabilities as a function of coverage and the coverage-dependent changes in optical reflectivity were measured. For the Pb/MgO(100) system, an initial sticking probability of 0.70 at 300 K was observed, whereas for the Pb/p(2×1)-oxide on Mo(100) surface unit sticking probability was observed. The relationship between these quantities and the adsorption energetics is discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Urethral epithelial cells are invaded by Neisseria gonorrhoeae during gonococcal infection in men. To understand further the mechanisms of gonococcal entry into host cells, we used the primary human urethral epithelial cells (PHUECs) tissue culture system recently developed by our laboratory. These studies showed that human asialoglycoprotein receptor (ASGP-R) and the terminal lactosamine of lacto-N-neotetraose-expressing gonococcal lipooligosaccharide (LOS) play an important role in invasion of PHUECs. Microscopy studies showed that ASGP-R traffics to the cell surface after gonococcal challenge. Co-localization of ASGP-R with gonococci was observed. As ASGP-R-mediated endocytosis is clathrin dependent, clathrin localization in PHUECs was examined after infection. Infected PHUECs showed increased clathrin recruitment and co-localization of clathrin and gonococci. Preincubating PHUECs in 0.3 M sucrose or monodansylcadaverine (MDC), which both inhibit clathrin-coated pit formation, resulted in decreased invasion. N. gonorrhoeae strain 1291 produces a single LOS glycoform that terminates with Gal(β1–4)GlcNac(β1–3)Gal(β1–4)Glc (lacto-N-neotetraose). Invasion assays showed that strain 1291 invades significantly more than four isogenic mutants expressing truncated LOS. Sialylation of strain 1291 LOS inhibited invasion significantly. Preincubation of PHUECs in asialofetuin (ASF), an ASGP-R ligand, significantly reduced invasion. A dose–response reduction in invasion was observed in PHUECs preincubated with increasing concentrations of NaOH-deacylated 1291 LOS. These studies indicated that an interaction between lacto-N-neotetraose-terminal LOS and ASGP-R allows gonococcal entry into PHUECs.
    Type of Medium: Electronic Resource
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