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  • 2000-2004  (2)
  • 2002  (2)
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  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2054-2056 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs layers with In composition of 0.57 were grown with metalorganic vapor phase epitaxy (MOVPE) using graded buffer layers on exactly oriented and misoriented GaAs(100) substrates. No mirror-like surface was obtained at growth temperatures between 570 °C and 630 °C. A mirror-like surface was achieved at a growth temperature of 450 °C. The threading dislocation density in the layer grown at 450 °C on the GaAs substrate misoriented toward (111)A was determined to be 1×107 cm−2 using transmission electron microscopy. Photoluminescence results also confirmed that the density of recombination centers in layers grown at 450 °C was low. Low temperature growth with MOVPE was found to be effective in InGaAs layers on GaAs substrates with high In composition above 0.4. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1365-2222
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background Prostaglandin D2 (PGD2), a major cyclo-oxygenase metabolite of arachidonic acid in mast cells, induces bronchoconstriction in the human lung. It has been reported that mice lacking PGD receptor fail to develop the bronchial hyper-responsiveness upon ovalbumin challenge, suggesting that PGD2 functions as a mediator of allergic asthma.Objective To determine if there are any mutations associated with the development of asthma in the haematopoietic prostaglandin D synthase (H-PGDS) gene and the human prostanoid DP receptor (PTGDR) gene.Methods and results We screened the 5′flanking and coding regions of the H-PGDS gene and the PTGDR gene by direct sequence. We identified one variant in intron 2 (IVS2 + 11 A 〉 C) and one variant in intron 3 (IVS3 + 13T 〉 C) of the H-PGDS gene, and two variants in the 5′flanking region of the PTGDR gene (−197T 〉 C and −2C 〉 T). The IVS3 + 13T 〉 C and −197T 〉 C variants were rare, appearing only once in 48 subjects. transmission disequilibrium test (TDT) analysis of 144 asthmatic families revealed that the IVS2 + 11 A allele of the H-PGDS gene was significantly transmitted preferentially to asthma-affected children (P = 0.0056), but no association was observed between −2C/T polymorphism of the PTGDR gene and asthma (P 〉 0.05).Conclusion Our results suggest that the IVS2 + 11 A/C allele may be involved in the development of asthma in the Japanese population.
    Type of Medium: Electronic Resource
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