Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (2)
  • 2002  (2)
Source
Material
Years
  • 2000-2004  (2)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Ferroelectric and optical properties of Ba0.8Sr0.2TiO3 thin film (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5972-5978 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Barium strontium titanate (Ba0.8Sr0.2TiO3) thin films have been prepared on Pt/Ti/SiO2/Si substrates using a soft solution processing. X-ray diffraction and also micro-Raman spectroscopy showed that the Ba0.8Sr0.2TiO3 thin films exhibited a tetragonal structure at room temperature. The presence of Raman active modes was clearly shown at the 299 and 725 cm−1 peaks. The tetragonal-to-cubic phase transition in the Ba0.8Sr0.2TiO3 thin films is broadened, and suppressed at about 35 °C, with a maximum dielectric constant of 948 (100 kHz). Electrical measurements for the prepared Ba0.8Sr0.2TiO3 thin films showed a remnant polarization (Pr) of 6.5 μC/cm2, a coercive field (Ec) of 41 kV/cm, and good insulating properties. The dispersion of the refractive index is interpreted in terms of a single electronic oscillator at 6.97 eV. The direct band gap energy (Eg) and the refractive index (n) are estimated to be 3.3 eV and n = 2.27–2.10, respectively. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1466526
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Analysis of the admittance-frequency and capacitance–voltage of dense SnO2⋅CoO-based varistor ceramics (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6007-6014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes the admittance-frequency feature of a class of SnO2⋅CoO-based polycrystalline ceramics with high nonlinear current–voltage characteristics (nonlinear coefficients above 50). Broad relaxation peaks caused by the presence of deep trap states were characterized based on the admittance response of different systems doped with La2O3, Pr2O3, and CeO2. The calculation of the energy of this deep trap level revealed not only that all the compositions share the same value but also that this value could be attributed to an oxygen vacancy or to CoSn[partial lengthening] like defects. The values of barrier height and density of states obtained from a capacitance–voltage analysis are in good agreement with the nonlinear coefficients. The highest nonlinear coefficients are found in compositions with greater barrier height values and higher density of deep trap states at the grain boundary interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1455685
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...