ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We present a study of the photoresist (PR) etching and the low-k materials damage using aferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for thelow-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etchingrate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of thegas flow ratio and bias power on the amount of etching damage to the low-k material
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.555.113.pdf
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