ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films werefabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and theferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in theremanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ecof the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.91.pdf
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