ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted inTO220 packages. The drain-source avalanche breakdown voltage without any gate bias(Vgs=0V) is measured to be 〉1400V. The SiC DACFET keeps the normally-off characteristicseven at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kWDC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated usingthe SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically usingthe SiC-DACFET down to 77μJ/pulse which is less than 1/10 of that using the Si-IGBT
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.913.pdf
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