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Due to technical work, the interlibrary loan service wont be available from March 28th until presumably April 3rd.
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• 2000-2004  (3)
• 1965-1969  (1)
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• 1
Electronic Resource
Springer
Journal of experimental and theoretical physics 91 (2000), S. 1250-1260
ISSN: 1090-6509
Source: Springer Online Journal Archives 1860-2000
Topics: Physics
Notes: Abstract Long-term resistance relaxations induced by uniaxial compression in (001)p-GaAs/Al0.5Ga0.5 As heterostructures are observed, and the main properties of these relaxations are investigated: the dependence of their character on the direction of the uniaxial compression, the change in concentration of current carriers during the relaxation processes, and the quenching of the relaxations by temperature, illumination, and high electric fields. It is found that the character of the relaxation process is different for compression directions [110] and $$[1\bar 10]$$ : in the first case the concentration of two-dimensional holes in the quantum well decreases in the course of the relaxation, while in the second case it increases. A model is proposed in which the cause of the relaxations of the piezoresistance and the anisotropic character of these relaxations is assumed to be the piezoelectric field, the value of which, according to estimates, is |E z| = 1.152 × 104 V/cm per kbar.
Type of Medium: Electronic Resource
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• 2
Electronic Resource
College Park, Md. : American Institute of Physics (AIP)
The Journal of Chemical Physics 116 (2002), S. 1250-1258
ISSN: 1089-7690
Source: AIP Digital Archive
Topics: Physics , Chemistry and Pharmacology
Notes: Control of near-degeneracy effects and dynamical correlation in atoms and molecules is within sight, thanks to an economical method that mixes configuration interaction (CI) and density functional theory (DFT). The influence of the size of the configuration-space has been studied for light systems including elements of the first and second period of the Periodic Table. © 2002 American Institute of Physics.
Type of Medium: Electronic Resource
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• 3
Electronic Resource
Woodbury, NY : American Institute of Physics (AIP)
Applied Physics Letters 79 (2001), S. 1471-1473
ISSN: 1077-3118
Source: AIP Digital Archive
Topics: Physics
Notes: Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect. © 2001 American Institute of Physics.
Type of Medium: Electronic Resource
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• 4
Electronic Resource
Springer
Powder metallurgy and metal ceramics 7 (1968), S. 695-698
ISSN: 1573-9066
Source: Springer Online Journal Archives 1860-2000
Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes: Conclusions Particle growth during the reduction of tungsten and molybdenum powders and the shrinkage kinetics of these powders depend on two processes taking place simultaneously, namely, partial melting and vaporization of surface layers of the dioxides of these metals. During high-temperature reduction (〉 1100°C), fine particles of tungsten and molybdenum dioxides are vaporized and redeposited on large particles; on the surface of the particles, a liquid phase may form, resulting in the generation of capillary forces which create a bond between separate particles. Melting of the oxides covering the surface of metallic tungsten and molybdenum particles promotes shrinkage during sintering, while conversely vaporization of the oxides inhibits the shrinkage of these metals.
Type of Medium: Electronic Resource
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